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FM24CL16B-G

16Kbit I2C F-RAM, 1MHz, 10^14 Endurance, SOIC-8

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Manufacturer Part：

FM24CL16B-G

Package：

SOIC-8 (4.9 x 3.9 x 1.5 mm, 1.27mm pitch)

Description

Product Overview

The FM24CL16B-G from Infineon (formerly Cypress/Ramtron) is a 16Kbit I2C F-RAM with 2Kx8 organization, 1MHz bus speed, 100 trillion write endurance, and SOIC-8 package.

Key Specifications

Type	16Kbit Serial I2C F-RAM (Ferroelectric RAM)
Density	16 Kbit (2K x 8 bits)
Organization	2048 bytes x 8 bits
Interface	I2C (Standard 100kHz / Fast 400kHz / Fast+ 1MHz)
Supply Voltage	2.7V to 3.65V (CL = low voltage version)
Active Current	100 uA @ 100kHz; 300 uA @ 1MHz
Standby Current	3 uA (typical)
Write Endurance	100 trillion (10^14) read/write cycles
Data Retention	151 years @ 65C
Write Time	NoDelay writes (immediate, no page buffer)
WP (Write Protect)	Yes (full array protection when HIGH)
Package	SOIC-8 (150 mil)
Operating Temperature	-40C to +85C

Features

16Kbit F-RAM with 10^14 read/write endurance
NoDelay writes (no write cycle delay, no polling needed)
151-year data retention at 65C
1MHz I2C Fast-mode Plus support
Hardware drop-in replacement for I2C EEPROM
Low power: 100uA active at 100kHz
Hardware write protect pin
Unlimited sequential read/write within address range

Applications

Data logging with frequent writes
Configuration storage with unlimited endurance
Industrial control parameter storage
EEPROM upgrade with zero write latency

Product Introduction:FM24CL16B-G Product Introduction

The FM24CL16B-G from Infineon (formerly Cypress Semiconductor, originally Ramtron) is a 16Kbit (2K x 8) ferroelectric random access memory (F-RAM) with an I2C serial interface in an SOIC-8 package. The CL suffix indicates the 2.7V to 3.65V low-voltage version (compared to the 4.5-5.5V FM24C16B). The G suffix indicates RoHS-compliant lead-free packaging. F-RAM technology provides three critical advantages over conventional EEPROM: (1) NoDelay writes – data is written to the memory array immediately at bus speed with no write cycle delay, eliminating the need for acknowledge polling; (2) 100 trillion (10^14) write cycle endurance, which is essentially unlimited compared to EEPROM’s typical 1 million cycles; and (3) much lower write power consumption because F-RAM does not require the high-voltage charge pump used by EEPROM for tunneling. The device supports I2C speeds up to 1MHz (Fast-mode Plus), four times faster than standard EEPROM’s 400kHz maximum. The FM24CL16B is a hardware drop-in replacement for standard 24C16-type I2C EEPROMs, requiring no hardware changes for upgrade. The 151-year data retention at 65C exceeds EEPROM’s typical 100-year specification.

Working Principle:FM24CL16B-G Working Principle

The FM24CL16B-G uses ferroelectric random access memory (F-RAM) technology based on lead zirconate titanate (PZT) ferroelectric capacitors. Each memory cell consists of a selection transistor and a ferroelectric capacitor. The ferroelectric capacitor stores data as the polarization state of the PZT crystal: when an electric field is applied across the capacitor, the dipoles in the PZT crystal align in one of two stable directions (up or down), representing binary 0 or 1. This polarization remains stable without power, providing non-volatile data storage. Reading is destructive: a voltage pulse is applied and the resulting displacement current is compared with a reference to determine the stored state. After reading, the original data is immediately rewritten (restore cycle). Because the read and write access times are identical (both are simple voltage pulse operations), there is no write delay as with EEPROM’s slow Fowler-Nordheim tunneling process. The NoDelay write feature means that as each byte is clocked in over I2C, the data is written to the F-RAM array before the acknowledge is sent back to the master – there is no separate write cycle waiting period. The 10^14 write endurance results from the fact that F-RAM polarization switching is a reversible, non-degrading process, unlike EEPROM tunneling which gradually damages the oxide. The I2C interface operates identically to standard EEPROM, using the same device address format (1010 + A2A1A0 + R/W), byte addressing, and sequential read/write protocols.

Pin Description:FM24CL16B-G Pin Definition and Functions

Pin	Name	Type	Function
1	A0	Input	Address bit 0 (connect to VCC or GND)
2	A1	Input	Address bit 1 (connect to VCC or GND)
3	A2	Input	Address bit 2 (connect to VCC or GND)
4	VSS	Power	Ground
5	SDA	I/O	I2C serial data (open-drain)
6	SCL	Input	I2C serial clock
7	WP	Input	Write protect (HIGH=protect all)
8	VDD	Power	Supply voltage (2.7-3.65V)

Application Scenarios:In which products and applications isFM24CL16B-G used

Industrial data logger writing every 10 seconds with 10^14 endurance providing 31.7 million years of operation vs. 115 days for EEPROM
3.3V MCU configuration storage with NoDelay writes eliminating 5ms EEPROM write-cycle polling overhead
Motor controller calibration storage with 1MHz I2C Fast-mode Plus readback and unlimited write endurance for real-time parameter updates

Alternative Models:What chips are recommended as replacements for FM24CL16B-G

Manufacturer	Part Number	Package	Notes
Infineon	FM24C16B-G	SOIC-8	5V version (4.5-5.5V)
Infineon	FM24CL04B-G	SOIC-8	4Kbit, smaller density
Infineon	FM24CL64B-G	SOIC-8	64Kbit, larger density
Fujitsu	MB85RC16PNF-G-JNERE1	SOIC-8	16Kbit F-RAM, equivalent
onsemi	CAT24C02TDI-GT3A	TSOT-23-5	2Kbit EEPROM, lower endurance