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RB751V40T1G

30V/30mA Schottky diode, 0.37V VF, 1.5pF, SOD-523 (0603)

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Manufacturer Part：

RB751V40T1G

Package：

SOD-523 / 0603 (1.6 x 0.8 x 0.6 mm)

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Description

Product Overview

The RB751V40T1G from onsemi is a 30V/30mA Schottky barrier diode in a SOD-523 (0603) surface-mount package, designed for high-speed switching and low-forward-voltage rectification.

Key Specifications

Type Schottky Barrier Diode (SBD)
Reverse Voltage (VR) 30V
Forward Current (IF) 30 mA
Forward Voltage (VF) 0.37V (typ @ IF=1mA)
Reverse Current (IR) 1 uA (max @ VR=25V)
Junction Capacitance 1.5 pF (typ @ 1MHz, VR=1V)
Reverse Recovery Time negligible (Schottky)
Package SOD-523 / 0603 (1.6 x 0.8 x 0.6mm)
Operating Temperature -55 to +150 C (TJ)

Features

  • Ultra-low 0.37V forward voltage at 1mA
  • 30V reverse voltage rating
  • 1.5pF low junction capacitance
  • 1uA maximum reverse leakage
  • Sub-nanosecond switching speed
  • Tiny SOD-523 (0603) footprint

Applications

  • Small-signal rectification
    • RF detector and mixer Clamping and protection Logic level shifting

The RB751V40T1G from onsemi is a small-signal Schottky barrier diode in an ultra-compact SOD-523 (0603-equivalent) surface-mount package. The Schottky barrier metal-silicon junction provides an exceptionally low forward voltage drop of 0.37V typical at 1mA forward current, significantly lower than conventional silicon P-N junction diodes (typically 0.6-0.7V at the same current). This low VF makes the RB751V40T1G ideal for small-signal rectification and clamping applications where minimizing voltage drop is critical, such as in low-voltage logic circuits, battery-powered devices, and signal conditioning. The 30V reverse voltage rating is adequate for most logic-level and low-voltage power supply applications. The 1.5pF junction capacitance at 1V reverse bias ensures minimal signal distortion in high-frequency applications such as RF detectors, mixers, and sampling gates. The negligible reverse recovery time (intrinsic to Schottky diodes) enables high-speed switching without the reverse recovery losses associated with P-N junction diodes. The 1uA maximum reverse leakage at 25V and 25C is well-controlled for a Schottky diode, ensuring minimal power loss in blocking state. The tiny SOD-523 package (1.6 x 0.8mm) is ideal for dense PCB layouts in portable and handheld devices where board space is at a premium.

The RB751V40T1G operates as a Schottky barrier diode using a metal-silicon junction. The low barrier height results in a forward voltage of approximately 0.37V at 1mA, compared to 0.6-0.7V for P-N diodes. As a majority-carrier device, there is no minority carrier storage, resulting in essentially zero reverse recovery time. The 1.5pF junction capacitance is determined by the small junction area and the metal-semiconductor barrier, enabling high-frequency operation. The tradeoff for low VF is higher reverse leakage than P-N diodes, but at 1uA maximum it remains well-controlled.

Pin Name Function
1 Cathode Negative terminal (marked with band on package)
2 Anode Positive terminal
  • Signal rectification: 3.3V logic signal rectification with 0.37V drop (vs 0.7V for 1N4148) preserving signal margin
  • RF detector: 1.5pF capacitance allows use as AM detector at VHF frequencies with minimal loading
  • Clamping: protect MCU GPIO from overshoot by clamping to VCC with low VF Schottky
  • OR-ing: diode-OR two 3.3V supply rails with only 0.37V drop per diode
Manufacturer Part Number Package Notes
onsemi RB751S40T1G SOD-323 Larger SOD-323 package version
Nexperia BAT54S,215 SOT-23 30V/30mA Schottky, common cathode pair
onsemi MBR0520LT1G SOD-123 20V/500mA, higher current Schottky
Nexperia 1PS76SB10,215 SOD-523 Pin-compatible Schottky, similar spec
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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