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MMBT3904

NPN transistor, 40V, 200mA, 300MHz, SOT-23

28500

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Manufacturer Part：

MMBT3904

Package：

SOT-23 (2.9×1.3×1.0 mm, 1.9mm pitch)

Description

Product Overview

The MMBT3904 from ON Semiconductor (and Nexperia) is an NPN general-purpose bipolar junction transistor in a SOT-23 surface-mount package. It is the SMD equivalent of the classic 2N3904 through-hole transistor, offering 40V VCEO, 200 mA IC, and 300 MHz transition frequency. Widely used for general-purpose amplification and switching in virtually every electronic design.

Key Specifications

Type	NPN Bipolar Junction Transistor
VCEO (Collector-Emitter)	40V
VCBO (Collector-Base)	60V
VEBO (Emitter-Base)	6.0V
IC (Continuous Collector Current)	200 mA
hFE (DC Current Gain)	100-300 @ 10 mA, 1V
VCE(sat)	0.2V max @ 10 mA, 1 mA
VBE(sat)	0.85V max @ 10 mA, 1 mA
fT (Transition Frequency)	300 MHz
Power Dissipation	350 mW (FR-4 PCB)
Operating Temperature	-55°C to +150°C (junction)
Package	SOT-23 (TO-236AB)

Features

General-purpose NPN transistor for amplification and switching
300 MHz transition frequency for RF and high-speed applications
Wide hFE range: 100-300 at 10 mA collector current
Low saturation voltage: 0.2V max at 10 mA
Complementary PNP: MMBT3906
Industry-standard SOT-23 pinout (1=Base, 2=Emitter, 3=Collector)
AEC-Q101 qualified versions available for automotive

Applications

General-purpose low-power amplification
Digital logic switching and signal buffering
LED driver and small load switching
Emitter-follower and common-emitter circuits
Sensor signal conditioning

Product Introduction:MMBT3904 Product Introduction

The MMBT3904 from ON Semiconductor is the industry-standard SMD NPN general-purpose transistor in a SOT-23 package. With 40V VCEO, 200 mA IC, and 300 MHz transition frequency, it is the surface-mount equivalent of the classic 2N3904. Its high gain (hFE 100-300), low saturation voltage, and wide availability make it the default choice for amplification and switching in virtually every electronics design.

Working Principle:MMBT3904 Working Principle

The MMBT3904 is a silicon NPN epitaxial planar transistor. Current flows from collector to emitter when the base-emitter junction is forward biased (VBE > 0.65V). The base current is amplified by the DC current gain (hFE), producing a larger collector current. In switching applications, the transistor is driven into saturation (VCE < 0.2V) by providing sufficient base current. The 300 MHz transition frequency indicates excellent high-frequency performance, making it suitable for RF and video signal amplification. The complementary PNP type MMBT3906 enables push-pull and class AB amplifier designs.

Pin Description:MMBT3904 Pin Definition and Functions

Pin	Name	Type	Function
1	Base	Input	Transistor base (control terminal)
2	Emitter	Power	Transistor emitter
3	Collector	Output	Transistor collector

Application Scenarios:In which products and applications isMMBT3904 used

General-purpose low-power signal amplification up to 100 MHz
Digital logic switching and signal buffering/level shifting
LED driver and small load switching (up to 200 mA)
Emitter-follower buffer and common-emitter amplifier circuits
Sensor signal conditioning and impedance transformation

Alternative Models:What chips are recommended as replacements for MMBT3904

Manufacturer	Part Number	Package	Notes
Nexperia	MMBT3904,215	SOT-23	Direct equivalent from Nexperia
Diodes Inc	MMBT3904-7-F	SOT-23	Direct equivalent from Diodes Inc
ON Semi	MMBT2222ALT1G	SOT-23	Higher current (600mA), similar function
ON Semi	MMBT3906LT1G	SOT-23	Complementary PNP version
Various	2N3904	TO-92	Through-hole equivalent