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FDD86102

N-ch MOSFET, 100V, 36A, 24mΩ, PowerTrench, DPAK-3

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Manufacturer Part：

FDD86102

Package：

DPAK-3 / TO-252-3 / SC-63 (6.54×6.1×2.29 mm)

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Description

Product Overview

The FDD86102 from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V/36A (Tc) with 24 mΩ max on-resistance at VGS=10V in a DPAK-3 (TO-252) surface mount package. Using advanced PowerTrench technology, it achieves very low QG and QGD for fast switching, making it ideal for high-efficiency DC-DC converter and motor drive applications.

Key Specifications

Channel Type N-channel enhancement mode
VDS (max) 100V
ID (max) 36A @ TC=25°C; 8A @ TA=25°C
RDS(on) @ VGS=10V 24 mΩ max
RDS(on) @ VGS=6V 38 mΩ max
VGS(th) (max) 4V @ ID=250µA
QG (total gate charge) 7.6 nC typical @ VGS=4.5V; 13.4 nC @ 10V
QGD 3.7 nC typical
CISS 780 pF typical
Ptot 62W @ TC=25°C; 3.1W @ TA=25°C
Operating Temperature -55°C to +150°C (junction)
Package DPAK-3 / TO-252-3 (SC-63)

Features

  • Shielded Gate PowerTrench technology for extremely low RDS(on)
  • Very low QG and QGD compared to competing trench technologies
  • 100V rating with 24 mΩ RDS(on) at 10V gate drive
  • Fast switching speed for high-frequency applications
  • 100% UIL (Unclamped Inductive Load) tested
  • High power handling in industry-standard DPAK package
  • RoHS compliant

Applications

  • High-efficiency DC-DC converters (48V systems)
  • Motor drive and inverter power stages
  • Power supply primary-side switching
  • Load switching and battery management

The FDD86102 from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V/36A with 24 mΩ max RDS(on) at VGS=10V in a DPAK-3 package. With very low gate charge (7.6 nC @ 4.5V), fast switching, and 100% UIL tested, it is ideal for high-efficiency 48V DC-DC converters, motor drives, and power supply switching stages.

The FDD86102 uses onsemi’s Shielded Gate PowerTrench technology, which integrates a shield electrode between the gate and drain to reduce gate-drain charge (QGD) and gate-drain capacitance (CRSS). This shielding effect dramatically reduces the Miller plateau voltage and switching losses compared to conventional trench MOSFETs. The trench gate structure provides high channel density for low RDS(on) (24 mΩ), while the shield electrode ensures low switching energy even at high drain-source voltages. The vertical DMOS structure supports 100V breakdown voltage with 36A current handling. The DPAK package provides good thermal performance (Rth(j-c) ≈ 2 K/W) for surface mount power applications.

Pin Name Type Function
1 Gate Input Gate terminal
2 Source Power Source terminal
3 (tab) Drain Power Drain terminal (connected to exposed tab)
  • High-efficiency DC-DC converters for 48V telecom and server power
  • Motor drive and inverter power switching stages
  • Power supply primary-side switching transistor
  • Load switching and battery management in industrial systems
Manufacturer Part Number Package Notes
onsemi FDD86102LZ DPAK-3 Lower threshold voltage version
onsemi FDB86102 D2PAK-3 Higher power D2PAK package
Infineon IPD50N10S2L-23 DPAK 100V, 23 mΩ, comparable
Vishay IRFR3710ZPBF DPAK 100V, 22 mΩ, alternative
ST STB120N10F7 DPAK 100V, 10 mΩ, lower RDS(on)
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Quality Assurance

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All of our electronic components are procured from official authorized distributors and original manufacturers. We strictly reject counterfeits, refurbished parts, disassembled components and gray-market goods. Every product is guaranteed to be brand-new original parts and fully consistent with the original technical parameters. For branded products such as NXP IC series, we maintain complete supply channel documents to realize full product traceability.

2. Strict Full-batch Quality Inspection

We implement 100% full-batch quality control for all goods before shipment. Our professional QC team conducts multi-dimensional tests including appearance inspection, electrical parameter testing, performance verification and packaging check. Each batch of components is attached with complete inspection reports and batch records. We stick to zero-tolerance standards for defective products to ensure every piece of component meets industrial application requirements.

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Contact Information

Email: info@materialparts.com

Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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All products are sourced from official authorized channels and are 100% original genuine parts. Every batch of goods undergoes strict full-process quality inspection before delivery, with complete batch records and traceability documents provided. Our products comply with AEC-Q standards for automotive electronics and high-reliability specifications for medical devices. We eliminate counterfeits, refurbished parts and defective products from the source to secure your project production.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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