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MMBT2907ALT1

PNP BJT, -60V, -600mA, hFE 100-300, SOT-23

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Manufacturer Part：

MMBT2907ALT1

Package：

SOT-23 (TO-236-3, 2.9 x 1.3 x 1.0 mm)

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Description

Product Overview

The MMBT2907ALT1 is an onsemi general-purpose PNP silicon transistor with -60V VCEO, -600mA IC, hFE 100-300, 200MHz fT, 225mW Pd. Packaged in SOT-23, -55C to +150C.

Key Specifications

Polarity PNP
VCEO -60V
IC -600mA continuous
hFE 100 – 300
fT 200 MHz
Package SOT-23

Features

  • PNP general-purpose silicon
  • -60V collector-emitter voltage
  • -600mA continuous collector current
  • 100-300 hFE current gain
  • 200MHz transition frequency
  • 225mW total power dissipation
  • AEC-Q101 qualified (SZ prefix)

Applications

  • General-purpose switching
  • Signal amplification
  • Load driver
  • Complementary pair with NPN

The MMBT2907ALT1 is an onsemi general-purpose PNP silicon bipolar junction transistor in an SOT-23 surface-mount package. It is the SMD equivalent of the through-hole 2N2907A. The -60V VCEO and -600mA continuous IC provide ample headroom for general-purpose switching and small-signal amplification. The 100-300 hFE range (A suffix = tighter gain selection) provides sufficient current gain. The 200MHz fT supports moderate-speed switching up to approximately 20MHz. The 225mW power dissipation limits the device to low-power applications, though -600mA IC allows driving small relays and LEDs. The AEC-Q101 qualified SZ prefix variant is available for automotive. The LT1 suffix indicates 3000-unit tape-and-reel.

The MMBT2907ALT1 is a planar epitaxial PNP silicon BJT. Current flows from emitter to collector when the base-emitter junction is forward biased (VEB > 0.6V). Base current IB is amplified by hFE (100-300) to produce IC = hFE * IB. The PNP construction has holes as majority carriers in the emitter, injected into the base where they diffuse to the collector. The narrow base width ensures most holes reach the collector, achieving high hFE. The 200MHz fT is where current gain drops to unity in common-emitter. The -60V VCEO is limited by avalanche breakdown. SOT-23 pinout: base on pin 1, emitter on pin 2, collector on pin 3.

Pin Mnemonic Description
1 Base Base terminal
2 Emitter Emitter terminal
3 Collector Collector terminal
  • PNP low-side load switch driving 500mA relay coil from 5V logic
  • Complementary push-pull output with MMBT2222ALT1 NPN for audio amplifier
  • Signal inversion and level shifting with hFE 100-300 for logic interface
  • General-purpose PNP switching up to 200MHz for RF signal routing
Model Manufacturer Key Difference
MMBT2907ALT1G onsemi Pb-free equivalent
BC856 Nexperia -80V, -100mA, higher hFE
MMBT4403LT1G onsemi -40V, -600mA, different gain
PMBT2907A Nexperia Equivalent PNP
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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