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MCP6L02T-E/SN

Dual CMOS RRIO op-amp, 1MHz GBW, 50uA/ch, 2-6V, SOIC-8

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Manufacturer Part：

MCP6L02T-E/SN

Package：

SOIC-8 (4.9 x 3.9 x 1.5 mm)

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Description

Product Overview

The MCP6L02T-E/SN from Microchip Technology is a dual general-purpose CMOS operational amplifier with 1MHz gain-bandwidth product in an 8-pin SOIC package. With 2.0V to 6.0V supply range, 50uA per-channel quiescent current, and rail-to-rail input/output, it is optimized for low-power battery-operated applications.

Key Specifications

Channels 2 (dual)
Architecture CMOS Rail-to-Rail
Gain-Bandwidth Product 1 MHz
Slew Rate 0.6 V/us
Input Offset Voltage 1.0 mV (typ), 3.5 mV (max)
Input Bias Current 1 pA (typ)
Supply Voltage Range 2.0V to 6.0V
Quiescent Current 50 uA/ch (typ)
CMRR 80 dB (typ)
PSRR 82 dB (typ)
Operating Temperature -40 to +125 C (E suffix)
Package SOIC-8

Features

  • Dual CMOS rail-to-rail operational amplifier
  • 1MHz gain-bandwidth product
  • Rail-to-rail input and output
  • 2.0V to 6.0V single-supply operation
  • 50uA per channel quiescent current
  • 1pA ultra-low input bias current
  • 1.0mV typical input offset voltage
  • Extended temperature range: -40 to +125C
  • Unity-gain stable
  • No phase reversal in overdrive conditions

Applications

  • Battery-powered instrumentation
  • Portable medical devices
  • Sensor signal conditioning
  • Active filters and buffers

The MCP6L02T-E/SN from Microchip Technology is a dual general-purpose CMOS operational amplifier with rail-to-rail input and output in an 8-pin SOIC package. The suffix decodes as: T=tape and reel, E=extended industrial temperature range (-40 to +125C), SN=SOIC-8 package. With 1MHz gain-bandwidth product, 50uA per-channel quiescent current, and 2.0V to 6.0V supply range, it is optimized for low-power battery-operated applications requiring precision signal conditioning. The rail-to-rail input stage covers the entire supply range (including both ground and VDD), while the rail-to-rail output stage swings within millivolts of the supply rails under light loads. The 1pA typical input bias current makes it ideal for high-impedance sensor interfaces.

The MCP6L02 operates through three circuit stages per channel: (1) Rail-to-Rail Input Stage: A complementary input pair (both PMOS and NMOS differential pairs) covers the entire common-mode range from VSS to VDD. When the input voltage is near VSS, the PMOS pair is active. When near VDD, the NMOS pair is active. In the middle range, both pairs contribute. The crossover point is carefully managed to minimize offset voltage transitions. (2) Gain Stage: A high-gain CMOS stage provides the open-loop voltage gain. Internal compensation (a small capacitor) ensures unity-gain stability with a 1MHz gain-bandwidth product. The 0.6V/us slew rate is typical for a 50uA amplifier. (3) Rail-to-Rail Output Stage: A Class AB CMOS output stage can swing to within a few millivolts of both supply rails under light load (<1kOhm). Under heavier loads, the output swing is limited by the output transistor on-resistance. The output does not phase reverse when the input is overdriven beyond the supply rails, a common problem with older CMOS op-amps.

Pin Name Type Description
1 VOUTA Output Channel A output
2 VINA- Input Channel A inverting input
3 VINA+ Input Channel A non-inverting input
4 VSS Power Negative supply / Ground
5 VINB+ Input Channel B non-inverting input
6 VINB- Input Channel B inverting input
7 VOUTB Output Channel B output
8 VDD Power Positive supply (2.0-6.0V)
  • Battery-powered sensor signal conditioning with 50uA/ch quiescent current and rail-to-rail I/O
  • Portable medical device amplifier with 1pA input bias for high-impedance electrode interface
  • Single-supply active filter at 3.3V with 1MHz GBW and rail-to-rail output for maximum dynamic range
  • Industrial sensor buffer with -40 to +125C extended temperature range and no phase reversal
Model Manufacturer GBW Iq/ch Notes
MCP6002-I/SN Microchip 1MHz 100uA Similar, higher Iq
TLV2462CDR TI 6.4MHz 500uA Higher speed
LMV358IDGKR TI 1MHz 100uA Pin-compatible alternative
OPA2314AIDR TI 3MHz 150uA Higher performance
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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