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LE25S81AMDTWG

8Mbit SPI NOR Flash, 70MHz, 1.65-1.95V, 8-SOIC, -40 to 90C

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Manufacturer Part：

LE25S81AMDTWG

Package：

8-SOIC (3.90 x 4.90 x 1.25 mm)

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Description

Product Overview

The LE25S81AMDTWG from onsemi is an 8Mbit (1M x 8-bit) SPI serial NOR flash memory operating from 1.65V to 1.95V with 70 MHz clock frequency. It features 500us page program time, software/hardware write protection, and deep power-down mode with 5 uA standby current. Housed in an 8-SOIC package.

Key Specifications

Density 8 Mbit (1 MB)
Interface SPI
Max Clock 70 MHz
Supply Voltage 1.65V – 1.95V
Page Size 256 bytes
Page Program Time 500 us (typ)
Sector Erase 4KB
Endurance 100,000 program/erase cycles
Package 8-SOIC (3.90mm width)
Operating Temp -40 to 90 C

Features

  • Standard SPI interface: CLK, CS, DI, DO
  • 70 MHz clock for fast read operations
  • Low-voltage operation: 1.65V to 1.95V
  • Deep power-down mode with 5 uA standby current
  • Software and hardware write protection
  • 100,000 program/erase cycle endurance
  • 20-year data retention

Applications

  • Low-voltage MCU code storage
  • Embedded system firmware
  • Configuration data storage
  • Wearable and IoT devices
  • Battery-powered consumer electronics

The LE25S81AMDTWG from onsemi is an 8Mbit serial NOR flash memory with SPI interface supporting clock frequencies up to 70 MHz. Designed for low-voltage applications from 1.65V to 1.95V, it provides 1M x 8 bit organization with 256-byte page programming in 500us. The device features deep power-down mode consuming only 5 uA, software and hardware write protection, and 100,000 program/erase cycle endurance with 20-year data retention. Packaged in 8-SOIC, it is ideal for code and data storage in battery-powered embedded systems.

The LE25S81AMDTWG uses standard SPI protocol with four signals: Chip Select (CS), Serial Clock (CLK), Serial Data Input (DI), and Serial Data Output (DO). Read operations are initiated by asserting CS low, sending the read command followed by the address, then clocking out data. Page programming loads up to 256 bytes into the internal buffer, then the page program command transfers buffer data to the flash array. Erase operations clear 4KB sectors, 32KB blocks, or the entire chip. Write protection is implemented via status register bits and the WP pin.

Pin Name Type Function
1 CS Input Chip select (active low)
2 DO Output Serial data output (MISO)
3 WP Input Write protect (active low)
4 VSS Ground Ground
5 DI Input Serial data input (MOSI)
6 CLK Input Serial clock
7 HOLD Input Suspend operation (active low)
8 VDD Power Supply (1.65-1.95V)
  • Low-voltage MCU code storage for 1.8V microcontrollers
  • Configuration data: Non-volatile storage for device settings and calibration
  • Battery-powered devices: Deep power-down extends battery life in IoT sensors
  • Embedded firmware updates: Sector-level write protection for in-field programming
Manufacturer Part Number Package Notes
Macronix MX25L8006EM1I-12G SOP-8 8Mbit, 1.65-1.95V, 120MHz
Winbond W25Q80DVSNIG SOIC-8 8Mbit, 2.3-3.6V, 104MHz
GigaDevice GD25Q80CTIGR SOP-8 8Mbit, 1.65-3.6V, 120MHz
ISSI IS25LP080D-JNLE SOIC-8 8Mbit, 2.3-3.6V, 133MHz
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Tel / WhatsApp: +86 13760382860

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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