Product Overview
The Infineon IPD50N06S2L-23 is a 60V N-channel OptiMOS power MOSFET in DPAK (TO-252) package. With 23mOhm max RDS(ON) at 10V gate drive and 50A drain current, it provides high-efficiency switching for automotive and industrial applications. The level-shifting design allows 4.5V logic-level gate drive.
Key Specifications
| Type | N-Channel OptiMOS |
| VDS | 60V |
| ID (Max) | 50A |
| RDS(ON) | 23mOhm @ VGS=10V |
| RDS(ON) | 30mOhm @ VGS=4.5V |
| Qg (Total) | 36nC @ 10V |
| VGS(th) | 1.5V (min) / 2.5V (max) |
| Power Dissipation | 83W |
| Package | DPAK (TO-252) |
| Operating Temperature | -55°C to +175°C |
| Qualification | AEC-Q101 |
Features
- 60V OptiMOS technology
- 23mOhm ultra-low RDS(ON)
- 50A high current capability
- Logic-level 4.5V gate drive
- AEC-Q101 automotive qualified
- DPAK for efficient thermal management
Applications
- Motor drive and inverters
- DC-DC converters
- Battery management systems
- Automotive power switching
- Industrial power tools