Product Overview
The FQPF4N90C from onsemi (formerly Fairchild) is a 900V N-Channel QFET power MOSFET rated at 4A continuous drain current with 4.2 Ohm max RDS(on) in a TO-220F (fully insulated) package. Using planar stripe DMOS technology, it offers low gate charge (17nC) and low Crss (5.6pF) for efficient high-voltage switching.
Key Specifications
| Channel Type | N-Channel |
| Drain-Source Voltage (VDSS) | 900 V |
| Continuous Drain Current | 4 A (Tc=25C) |
| On-Resistance (RDS(on)) | 4.2 Ohm max @ VGS=10V |
| Gate Charge (Qg) | 17 nC (typ) |
| Crss | 5.6 pF (typ) |
| Power Dissipation | 47 W (Tc=25C) |
| Avalanche Energy (EAS) | 570 mJ |
| Operating Temperature | -55 to +150 C |
| Package | TO-220F (3-pin, fully insulated) |
Features
- 900V N-Channel enhancement mode MOSFET
- RDS(on) = 4.2 Ohm max @ VGS=10V
- Low gate charge: 17nC typical
- Low Crss: 5.6pF typical
- 100% avalanche tested
- TO-220F fully insulated package
Applications
- Switch-mode power supplies (SMPS)
- Active power factor correction (PFC)
- Electronic lamp ballasts
- LCD/LED TV power supplies