Productos
The TGA2567-SM from Qorvo is a wideband GaN-on-SiC power amplifier operating from DC to 6 GHz in a surface-mount QFN package. Designed for high-power RF applications, it delivers up to 25W saturated output power with high gain and efficiency, making it suitable for electronic warfare, radar, and wideband communication systems.
Especificaciones
| Technology | GaN-on-SiC HEMT |
| Frequency Range | DC to 6 GHz (wideband) |
| Saturated Output Power | 25W typ |
| Small Signal Gain | 20 dB typ |
| Power Added Efficiency | 30% typ at Psat |
| Drain Voltage | 28V (typical) |
| Drain Current | 1.5A typ at Psat |
| Input/Output Impedance | 50 Ohms (internally matched) |
| Temperatura de funcionamiento | -40°C to +85°C (case) |
| Paquete | Surface-mount QFN |
Características
- Wideband DC to 6 GHz operation in single device
- High saturated output power of 25W
- High power added efficiency up to 30%
- 50-ohm internally matched input/output
- GaN-on-SiC for high voltage and high temperature operation
- Surface-mount QFN package for automated assembly
Aplicaciones
- Electronic warfare (EW) jammers
- Wideband radar transmitters
- Software-defined radio power amplification
- Test and measurement instrumentation
- Military communication systems