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STTH1002CB-TR

100V/2A ultrafast rectifier, 25ns trr, 0.75V VF, SMB

12500

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Pieza del fabricante：

STTH1002CB-TR

Paquete：

SMB (DO-214AA) (5.3 x 2.6 x 2.2 mm)

Marca：
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Descripción

Productos

The STTH1002CB-TR is a STMicroelectronics 100V/2A ultrafast recovery high-efficiency rectifier diode in a SMB (DO-214AA) package. It features 25ns reverse recovery time, 0.75V forward voltage, and 175C max junction temperature. Designed for high-frequency switching power supplies and free-wheeling applications.

Especificaciones

VRRM 100 V
IF(AV) 2 A
trr 25 ns typical
VF 0.75 V typical @ 2A
Tj Max 175 C
Paquete SMB (DO-214AA)

Características

  • 100V reverse voltage, 2A average current
  • 25ns ultrafast reverse recovery
  • 0.75V low forward voltage
  • 175C max junction temperature
  • High-efficiency rectification
  • SMB surface-mount package

Aplicaciones

  • High-frequency SMPS output rectification
  • Free-wheeling diode in converters
  • PFC boost diode
  • Snubber and clamp circuits

The STTH1002CB-TR is a STMicroelectronics ultrafast recovery high-efficiency rectifier diode rated for 100V reverse voltage and 2A average forward current in a compact SMB (DO-214AA) surface-mount package. The 25ns typical reverse recovery time makes it ideal for high-frequency switching power supply output rectification and free-wheeling applications where fast recovery minimizes switching losses and reverse recovery current spikes. The 0.75V typical forward voltage at 2A reduces conduction losses for improved efficiency. The 175C maximum junction temperature provides a large thermal margin for demanding applications. The planar silicon construction ensures reliable operation and low leakage current. The SMB package offers a good balance between current handling capability and board space, with cathode indicated by a band marking.

The STTH1002CB-TR is a planar silicon PN junction diode optimized for ultrafast reverse recovery. During forward bias, current flows from anode to cathode with a forward voltage drop of approximately 0.75V at rated current. When the diode is reverse-biased (e.g., at MOSFET turn-on in a free-wheeling application), stored minority carriers in the drift region must be swept out before the diode blocks voltage. The ultrafast 25ns recovery time is achieved through platinum or gold doping that creates recombination centers, rapidly removing stored charge. The reverse recovery current flows briefly during this transition, contributing to switching losses in the MOSFET; the faster the recovery, the lower the losses. The soft recovery characteristic minimizes ringing and EMI generation.

Pin Mnemonic Descripción
1 Ánodo Positive terminal
2 Cátodo Negative terminal (banded)
  • High-frequency flyback converter output rectification with 25ns recovery
  • Free-wheeling diode across inductor in buck/boost converters
  • PFC boost diode in 100V-range power factor correction stages
  • Snubber clamp diode in RCD snubber networks
Modelo Fabricante Diferencia clave
US1M onsemi 1000V/1A, SMB
ES2B Panjit 100V/2A, similar
UF1002 onsemi 100V/1A, DO-41
MURS210 onsemi 100V/2A, SMB
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