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STS5PF30L

P-CH MOSFET, -30V, -5A, 55mΩ RDS(on), logic-level, SO-8, STripFET

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Pieza del fabricante：

STS5PF30L

Paquete：

SO-8 (3.9mm width)

Marca：
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Compromiso de calidad
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Descripción

Productos

The STS5PF30L from STMicroelectronics is a P-channel 30V STripFET power MOSFET with 55 mΩ maximum on-resistance at VGS=-10V and -5A continuous drain current in an SO-8 surface-mount package. It features logic-level gate drive and is suitable for low-side load switching and battery management applications.

Especificaciones

  • Channel Type: P-Channel (enhancement mode)
  • VDS: -30V
  • VGS: ±16V
  • ID (continuous): -5A (TC=25°C), -4A (TC=100°C)
  • IDM (pulsed): -20A
  • RDS(on): 45 mΩ typ, 55 mΩ max @ VGS=-10V, ID=-2.5A
  • RDS(on): 65 mΩ max @ VGS=-4.5V, ID=-2.5A
  • VGS(th): -1V to -2.5V (ID=-250µA)
  • Qg: 16 nC max @ VGS=-5V
  • Ciss: 1350 pF
  • PTOT: 2.5W (TC=25°C)
  • Operating Temperature: -55°C ~ 150°C
  • Package: SO-8 (3.9mm width)

Características

  • Logic-level gate drive (fully enhanced at -4.5V)
  • Low RDS(on): 55 mΩ max at VGS=-10V
  • STripFET trench technology for low on-resistance
  • Low gate charge for fast switching
  • Source-drain diode with fast reverse recovery
  • Surface-mount SO-8 package

Aplicaciones

  • Battery management and protection
  • Load switching in portable devices
  • Power routing and selection
  • Motor drive H-bridge (P-side)
  • DC-DC converter synchronous switch

The STS5PF30L from STMicroelectronics is a P-channel power MOSFET built on STripFET trench technology, offering low on-resistance of 55 mΩ maximum at VGS=-10V in a compact SO-8 surface-mount package. The device is rated for -30V drain-source voltage and -5A continuous drain current, making it suitable for battery-powered load switching and power management applications. The logic-level gate drive (fully enhanced at -4.5V) allows direct interface with 3.3V and 5V microcontrollers without additional gate drive circuitry. The low 16 nC gate charge enables efficient high-frequency switching in DC-DC converter applications.

The STS5PF30L uses STMicroelectronics’ STripFET trench MOSFET technology where vertical trench gates are formed in the silicon to create a high-density cell structure. This geometry maximizes the channel width per unit area, reducing specific on-resistance compared to planar MOSFET structures. As a P-channel device, current flows from source to drain when the gate voltage is pulled below the source voltage, creating an inversion layer in the P-type body region. The logic-level threshold (-1V to -2.5V) ensures full enhancement at VGS=-4.5V, enabling direct drive from 3.3V logic. The intrinsic body diode between drain and source provides a current path during inductive load switching, with reverse recovery characteristics specified in the datasheet.

Pin Nombre Función
1 Fuente Source terminal (connected to V+ in high-side switch)
2 Fuente Source terminal
3 Fuente Source terminal
4 Puerta Gate terminal (logic-level drive)
5 Drenaje Drain terminal (connected to load)
6 Drenaje Drain terminal
7 Drenaje Drain terminal
8 Drenaje Drain terminal

The STS5PF30L is commonly used as a high-side power switch in battery management systems where the P-channel configuration eliminates the need for a charge pump for gate drive. In portable devices, it provides load switching with very low voltage drop due to its 55 mΩ on-resistance, preserving battery life. For power routing applications, it selects between two power sources (e.g., battery vs. USB) with minimal power loss. In DC-DC converters, it serves as the synchronous rectifier switch on the high side. The SO-8 package enables easy PCB layout with standard soldering processes.

Modelo Fabricante Diferencia clave
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FDS4953 onsemi -30V, -6.2A, 30mΩ, SO-8 dual
IRF9310TRPBF Infineon -20V, -6A, 22mΩ, SO-8
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