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STL76DN4LF7AG

Dual N-ch MOSFET, 40V, 40A, 5mΩ typ, STripFET F7, AEC-Q101, PowerFLAT 5x6

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Pieza del fabricante：

STL76DN4LF7AG

Paquete：

PowerFLAT 5x6 double island WF (5.0 x 6.0 x 0.9 mm)

Marca：
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Descripción

Productos

The STMicroelectronics STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET using STripFET F7 technology. It features 40 V drain-source voltage, 5 mΩ typical on-resistance, and 40 A continuous drain current per channel in a compact PowerFLAT 5×6 double island package with wettable flanks.

Especificaciones

Configuración Dual N-Channel
VDSS 40 V
ID (per channel) 40 A
RDS(on) Typ @ VGS=10V 5 mΩ
RDS(on) Max @ VGS=10V 6 mΩ
Qg Total 17 nC
VGS(th) Max 2.5 V
Ptot 71 W
Paquete PowerFLAT 5×6 double island WF

Características

  • AEC-Q101 qualified for automotive applications
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Wettable flank package for automated optical inspection

Aplicaciones

  • Automotive DC-DC converter switching
  • Motor drive and inverter stages
  • Battery management system switches
  • Power distribution and load switching

The STMicroelectronics STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET that utilizes ST’s advanced STripFET F7 technology with an enhanced trench gate structure. This results in an exceptionally low on-state resistance of 5 mΩ typical at VGS=10V, among the lowest available in this package class. The double island construction provides electrical isolation between the two MOSFET channels, enabling half-bridge or independent switch configurations. With 40 A continuous drain current per channel and 71 W total power dissipation, the device is suitable for demanding automotive power applications. The low Crss/Ciss ratio of 0.029 provides excellent EMI immunity by minimizing the Miller effect during switching transitions. The PowerFLAT 5×6 package features wettable flanks for reliable automated optical inspection of solder joints in automotive manufacturing.

The STL76DN4LF7AG contains two independent N-channel enhancement-mode vertical power MOSFETs in a double island PowerFLAT package. Each MOSFET consists of thousands of parallel trench-gate cells on a single die. When VGS exceeds the threshold voltage (1.5-2.5 V), an inversion layer forms in the P-body beneath the gate oxide, creating a conductive channel between source and drain. The STripFET F7 trench gate structure minimizes the cell pitch and optimizes the gate charge distribution, achieving 5 mΩ RDS(on) with only 17 nC total gate charge for excellent switching efficiency. The double island construction means each MOSFET die is mounted on its own electrically isolated copper pad, preventing cross-conduction and allowing half-bridge configurations without additional isolation. The low Crss (28 pF) relative to Ciss (956 pF) minimizes the Miller plateau during turn-off, reducing switching losses and improving EMI performance.

Pin Nombre Tipo Función
1 S1 Potencia Source MOSFET 1
2 G1 Entrada Gate MOSFET 1
3 S2 Potencia Source MOSFET 2
4 G2 Entrada Gate MOSFET 2
5 D2 Potencia Drain MOSFET 2
6 D1 Potencia Drain MOSFET 1
7 D1 Potencia Drain MOSFET 1
8 D2 Potencia Drain MOSFET 2
  • Automotive DC-DC converter synchronous rectification
  • Motor drive half-bridge power stage
  • Battery management system high-current switching
  • Automotive power distribution and load disconnect
Fabricante Número de pieza Paquete Notas
ST STL76DN4LF7AG PowerFLAT 5×6 This part
Infineon BSZ070N08LS5ATMA1 SuperSO-8 7mΩ 80V alternative
onsemi NVTFS5C412NL DFN-8 Dual N-ch, 40V
Vishay SiZ342DT PowerPAK Dual N-ch, 30V
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