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STD4NK60ZT4

600V N-ch MOSFET, 2 ohm, 4A, Zener-protected gate, SuperMESH, DPAK

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Pieza del fabricante：

STD4NK60ZT4

Paquete：

DPAK / TO-252 (6.6 x 6.0 x 2.3 mm)

Marca：
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Descripción

Productos

The STD4NK60ZT4 from STMicroelectronics is a 600V N-channel SuperMESH power MOSFET with Zener gate protection. It features 2 ohm RDS(on), 4A drain current, and 70W power dissipation in a DPAK (TO-252) surface-mount package.

Especificaciones

VDS 600V
VGS +/-30V
RDS(on) at VGS=10V 1.7 ohm (typ) / 2 ohm (max)
ID (continuous at TC=25C) 4A
VGS(th) 3.75V (typ)
QG (total) 18nC (typ)
EAS (avalanche) 40mJ
Temperatura de funcionamiento -55 to 150 C

Características

  • 600V N-channel SuperMESH technology
  • Zener-protected gate for enhanced reliability
  • 100% avalanche tested
  • Very low intrinsic capacitance
  • Low gate charge for fast switching
  • High dv/dt capability
  • DPAK surface-mount package

Aplicaciones

  • Offline switching power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • LED driver primary-side switches
  • High-voltage motor drives
  • Industrial power converters

The STD4NK60ZT4 from STMicroelectronics is a 600V N-channel power MOSFET developed using SuperMESH technology, an optimization of ST’s strip-based PowerMESH layout. The device features a typical RDS(on) of 1.7 ohm at VGS=10V with a continuous drain current rating of 4A. A key feature is the Zener-protected gate, which incorporates back-to-back Zener diodes between gate and source to protect against electrostatic discharge and voltage transients, enhancing reliability in harsh environments. The device is 100% avalanche tested and designed for high dv/dt capability, making it robust in inductive switching applications. The low gate charge of 18nC typical enables fast switching with minimal drive loss. Packaged in a surface-mount DPAK (TO-252) with 70W power dissipation rating, the STD4NK60ZT4 is ideal for offline switching power supplies and PFC circuits where surface-mount assembly is required.

The STD4NK60ZT4 operates as an N-channel enhancement-mode power MOSFET with Zener gate protection. Key subsystems include: (1) SuperMESH Structure – ST’s strip-based cell layout with charge compensation achieves lower RDS(on) per area compared to conventional planar MOSFETs, while maintaining high voltage blocking capability; (2) Zener Gate Protection – back-to-back Zener diodes between gate and source clamp gate voltage excursions, protecting the thin gate oxide from ESD and voltage spikes; (3) Body Diode – an intrinsic P-N junction body diode provides a reverse conduction path; (4) Avalanche Capability – the device is designed to absorb energy during avalanche breakdown (40mJ EAS), protecting against voltage spikes from transformer leakage inductance in flyback converters; (5) DPAK Package – the surface-mount TO-252 package features an exposed drain tab for efficient heat sinking to the PCB copper.

Pin Nombre Tipo Función
1 Puerta Entrada Gate drive input (Zener-protected)
2 Drenaje Potencia Drain terminal (also thermal tab)
3 Fuente Potencia Source terminal
Pestaña Drenaje Potencia Drain terminal (exposed heatsink pad)
  • Offline SMPS: primary-side switch in flyback converters up to 30W
  • PFC circuits: boost converter switch in low-power CCM/DCM PFC stages
  • LED driver: primary-side switch in isolated LED driver topologies
  • High-voltage motor drives: switch in BLDC motor inverter auxiliary circuits
  • Industrial power: auxiliary power supply switch in industrial equipment
Fabricante Número de pieza Paquete Notas
ST STB4NK60ZT4 D2PAK Higher power D2PAK version
Infineon IPD60R180P7S DPAK 600V, 1.8 ohm, CoolMOS
onsemi FQD4N60 DPAK 600V, 2.2 ohm, similar
Vishay IRFRC20TRPBF DPAK 600V, 2.0 ohm
ST STD5NK60ZT4 DPAK 5A, higher current version
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