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STPS1L30A

Schottky rectifier, 30V, 1A, 260mV VF@1A, SMA (DO-214AC), avalanche rated

10800

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Pieza del fabricante：

STPS1L30A

Paquete：

SMA (DO-214AC)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The STPS1L30A from STMicroelectronics is a 30V, 1A low forward voltage drop Schottky rectifier in an SMA (DO-214AC) surface-mount package. With a typical forward voltage of just 260 mV at 1A (125°C), it is designed for high-frequency miniature switched-mode power supplies and synchronous rectification applications.

Especificaciones

  • VRRM: 30V
  • IF(AV): 1A (square wave, δ=0.5)
  • IF(RMS): 10A
  • IFSM: 75A (tp=10ms, sinusoidal)
  • VF: 260 mV typ @ IF=1A, Tj=125°C
  • VF: 395 mV max @ IF=1A, Tj=25°C
  • IR: 200 µA max @ VR=VRRM, Tj=25°C
  • IR: 15 mA max @ VR=VRRM, Tj=100°C
  • PARM: 110W (tp=10µs, Tj=125°C)
  • Rth(j-l): 30°C/W (junction to lead)
  • Tj: -65°C ~ +150°C
  • Package: SMA (DO-214AC)

Características

  • Very low forward voltage drop reduces conduction losses
  • Avalanche rated for robustness in inductive circuits
  • Optimized for parallel operation with MOSFETs in synchronous rectification
  • Miniature surface-mount SMA package
  • ECOPACK2 compliant (RoHS)

Aplicaciones

  • DC-DC converter output rectification
  • Synchronous rectification bypass diode
  • Battery charger circuits
  • Telecom power supply rectification
  • Cordless appliance power management

The STPS1L30A from STMicroelectronics is a low forward voltage drop Schottky rectifier specifically designed for high-frequency miniature switched-mode power supplies. The 30V reverse voltage rating and 1A average forward current make it ideal for 3.3V and 5V output DC-DC converter rectification stages. The extremely low 260 mV forward voltage at 1A (125°C) significantly reduces conduction losses compared to standard Schottky diodes, improving overall converter efficiency. The device is also optimized for use in parallel with MOSFETs in synchronous rectification circuits, where it conducts during the MOSFET dead time. The SMA (DO-214AC) surface-mount package provides low thermal resistance and is compatible with standard pick-and-place assembly.

The STPS1L30A uses a metal-semiconductor (Schottky) junction formed by the contact between a metal (typically chromium or titanium-tungsten) and lightly doped N-type silicon. Unlike a PN junction diode, the Schottky junction operates with majority carrier conduction only — electrons cross the barrier from the semiconductor into the metal under forward bias. The absence of minority carrier storage eliminates reverse recovery charge, enabling very fast switching without the recovery losses associated with PN junction diodes. The low barrier height of the metal-semiconductor junction results in the characteristically low forward voltage drop (260 mV typ at 1A, 125°C). The trade-off is higher reverse leakage current compared to PN diodes, which increases with temperature and must be considered in thermal design.

Pin Nombre Función
1 Cátodo Negative terminal (marked with band on package)
2 Ánodo Positive terminal

The STPS1L30A is primarily used as the output rectifier in low-voltage DC-DC converters where its 260 mV forward drop minimizes conduction losses in the output stage. In synchronous buck converters, it serves as the bypass diode that conducts during the dead time between the high-side and low-side MOSFET transitions, preventing body diode conduction in the low-side MOSFET. For battery charger circuits, the low forward drop reduces power dissipation and heat generation. In telecom power supplies, the avalanche rating provides protection against voltage spikes from inductive loads. The SMA package is widely used in compact power supply designs where board space is limited.

Modelo Fabricante Diferencia clave
SS13 Múltiples 30V, 1A, SMA, generic alternative
STPS1L30U STMicroelectronics SMB package, higher surge rating
MBR130LSFT1G onsemi 30V, 1A, SOD-123FL, smaller
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