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STB6NK90ZT4

N-ch 900V MOSFET, 1.56Ohm RDS(on), 5.8A, SuperMESH, D2PAK, avalanche rated, PFC/SMPS

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Pieza del fabricante：

STB6NK90ZT4

Paquete：

D2PAK (TO-263-2) (10.16 x 8.40 x 4.60 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The STB6NK90ZT4 from STMicroelectronics is an N-channel 900V SuperMESH power MOSFET with 1.56 Ohm typical RDS(on) in a D2PAK package. Rated at 5.8A continuous drain current with 300mJ avalanche energy, it targets offline SMPS and PFC boost converter applications.

Especificaciones

VDS (Drain-Source) 900 V
RDS(on) (typical) 1.56 Ohm @ VGS=10V
ID (continuo) 5.8 A @ TC=25C
EAS (avalanche) 300 mJ
Qg (total gate charge) 46.5 nC (typical)
VGS(th) 3.0V to 4.5V
Temperatura de funcionamiento -55C to +150C

Características

  • 900V drain-source voltage for offline PFC and SMPS applications
  • 1.56 Ohm typical RDS(on) with SuperMESH technology
  • 100% avalanche tested for rugged switching operation
  • Zener gate protection for ESD robustness
  • Low 46.5nC total gate charge for efficient switching
  • D2PAK surface-mount package with 140W power dissipation

Aplicaciones

  • Offline switch-mode power supplies (SMPS)
  • PFC boost converters in power factor correction stages
  • Motor drive inverters for industrial applications
  • Lighting ballast and LED driver converters

The STB6NK90ZT4 from STMicroelectronics is an N-channel 900V SuperMESH power MOSFET in a D2PAK (TO-263) surface-mount package. Using ST’s SuperMESH technology, the device achieves 1.56 Ohm typical RDS(on) at VGS=10V with a low 46.5nC total gate charge, providing an excellent figure of merit for high-voltage switching applications. The device is rated for 5.8A continuous drain current at TC=25C and 3.65A at TC=100C. The 300mJ single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching events. Gate-source Zener protection provides ESD robustness. The D2PAK package enables 140W power dissipation at TC=25C with a junction-to-case thermal resistance of 0.89C/W. The device is 100% avalanche tested and targeted for offline switch-mode power supplies, PFC boost converters, motor drive inverters, and lighting ballast applications.

The STB6NK90ZT4 uses ST’s SuperMESH vertical DMOS technology for high-voltage power switching. (1) Cell Structure: The SuperMESH process uses a striped cell geometry with optimized pitch to minimize the specific on-resistance (RDS(on) x Area). The vertical current flow from drain (substrate) through the drift region and channel to the source provides high blocking voltage and low conduction loss. (2) Drift Region: The 900V blocking capability is achieved through a lightly-doped epitaxial drift layer. The drift layer thickness and doping are optimized to support the electric field during off-state while minimizing resistance during on-state. (3) Gate Charge: The 46.5nC total gate charge includes Qgs (8.5nC) for channel inversion and Qgd (25nC) for Miller plateau. The low Qgd minimizes switching losses in hard-switched applications. (4) Avalanche: When the drain voltage exceeds V(BR)DSS, the device enters avalanche breakdown. The 300mJ energy rating ensures the device can absorb inductive kickback energy without failure. (5) Zener Protection: Integrated gate-source Zener diodes clamp gate voltage transients to +/-20V, protecting the thin gate oxide from ESD damage.

Pin Nombre Tipo Función
1 Puerta Entrada MOSFET gate (Zener protected)
2 Drenaje Salida MOSFET drain (tab/heat sink)
3 Fuente Salida MOSFET source
  • Offline SMPS primary switch at 900V with 1.56Ohm RDS(on)
  • PFC boost converters in CCM/CRM with 300mJ avalanche rating
  • Motor drive inverters for industrial applications with Zener gate protection
  • Lighting ballast and LED driver converters at 5.8A continuous current
Fabricante Número de pieza Paquete Notas
ST STP6NK90Z TO-220 Through-hole version
Infineon IPD60R900P7S D2PAK 900V, 0.9Ohm, CoolMOS
onsemi FCPF099N65S3 D2PAK 650V SuperFET, lower voltage
ST STW11NM80 TO-247 800V, higher power
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