Productos
The SSM3J338R,LF from Toshiba is a P-channel MOSFET in a SOT-23F package featuring -12 V drain-source voltage, -6 A continuous drain current, and ultra-low 17.6 mOhm on-resistance at VGS=-8 V. Using Toshiba’s U-MOSVII trench process, it provides high-efficiency switching for battery and load management in portable devices.
Especificaciones
| Tipo | P-Channel Enhancement MOSFET |
| VDSS | -12 V |
| VGSS | +/-10 V |
| ID | -6 A (continuous) |
| RDS(on) | 17.6 mOhm @ VGS=-8V |
| RDS(on) | 20.2 mOhm @ VGS=-4.5V |
| RDS(on) | 27.9 mOhm @ VGS=-2.5V |
| VGS(th) | -0.3 to -1.0 V |
| Qg | 19.5 nC @ VGS=-4.5V |
| Ciss | 1400 pF |
| PD | 1 W (Ta) |
| Paquete | SOT-23F |
Características
- Ultra-low RDS(on): 17.6 mOhm at -8 V gate drive
- -6 A continuous current in tiny SOT-23F package
- Low threshold voltage: 0.3-1.0 V for direct 1.8 V logic drive
- U-MOSVII trench technology for low on-resistance
- 19.5 nC low gate charge for fast switching
- Suitable for battery switching and load management
Aplicaciones
- Battery disconnect and load switches in smartphones
- DC-DC converter synchronous rectifier
- Power path management in portable devices
- Motor driver for small brushed DC motors
- SSD and storage device power control