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SQS401EN

P-Channel MOSFET, -40V, -16A, 29mOhm RDS(on), PowerPAK 1212-8, AEC-Q101

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Pieza del fabricante：

SQS401EN

Paquete：

PowerPAK 1212-8 (3.3 x 3.3 x 1.1 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The SQS401EN is an automotive P-Channel TrenchFET power MOSFET from Vishay Siliconix, featuring -40V drain-source voltage and -16A continuous drain current in a compact PowerPAK 1212-8 surface-mount package. With 29 mOhm maximum RDS(on) and AEC-Q101 qualification, it is designed for high-side load switching and reverse polarity protection in automotive applications. 100% Rg and UIS tested for guaranteed reliability.

Especificaciones

Channel Type P-Channel
VDS -40V
ID (continuo) -16A
RDS(on) max 29 mOhm @ VGS=-10V
Qg (total gate charge) 21.2 nC
Power Dissipation 62.5W
Paquete PowerPAK 1212-8
Temperatura de funcionamiento -55°C to +175°C
Cualificación AEC-Q101
Technology TrenchFET

Características

  • AEC-Q101 automotive qualified
  • P-Channel for high-side switching
  • Low 29 mOhm RDS(on) for minimal conduction loss
  • 100% Rg and UIS tested
  • PowerPAK 1212-8 compact footprint
  • -55°C to +175°C extended temperature range

Aplicaciones

  • Automotive high-side load switching
  • Reverse polarity protection
  • Battery disconnect switches
  • Power distribution in automotive ECUs

The SQS401EN is an automotive P-Channel TrenchFET power MOSFET from Vishay Siliconix, featuring -40V drain-source voltage and -16A continuous drain current in a compact PowerPAK 1212-8 surface-mount package. With 29 mOhm maximum RDS(on) and AEC-Q101 qualification, it is designed for high-side load switching and reverse polarity protection in automotive applications. The TrenchFET technology provides low on-resistance with efficient die utilization. 100% Rg and UIS tested for guaranteed reliability in safety-critical applications.

The SQS401EN operates as a P-Channel enhancement-mode MOSFET:

1. TrenchFET Structure: The trench gate architecture provides high channel density, resulting in low RDS(on) in a compact die. Vertical current flow from source (top) through the channel to drain (bottom) maximizes current handling per unit area.

2. P-Channel Operation: Current flows from source to drain when the gate is pulled below the source (VGS < Vth). For a P-Channel MOSFET, the gate must be negative relative to the source to turn ON. This makes P-Channel MOSFETs ideal for high-side switching, where the load is connected between the MOSFET drain and ground. 3. RDS(on) and Switching: The 29 mOhm RDS(on) at VGS=-10V ensures minimal voltage drop and conduction loss. The 21.2 nC total gate charge enables efficient switching at moderate frequencies. 4. UIS (Unclamped Inductive Switching): 100% UIS tested means each device can safely absorb the energy from an unclamped inductive load, critical for automotive relay and solenoid driving applications.

Pin Nombre Tipo Función
1 Fuente Potencia Source terminal – connected to power rail for high-side switch
2 Puerta Entrada Gate terminal – controls MOSFET on/off state
3 Drenaje Potencia Drain terminal – connected to load
4 Fuente Potencia Source terminal (parallels pin 1 for current handling)

Note: PowerPAK 1212-8 pinout. Pins 1,4 are source; Pin 2 is gate; Pins 3,5,6,7,8 are drain. Multiple drain pins reduce parasitic inductance and improve current handling. The large drain pad area also serves as the primary thermal path to the PCB.

Aplicación Circuit Role Key Requirement
Automotive High-Side Switch Load switching for lights, motors -40V, -16A, AEC-Q101
Reverse Polarity Protection Series MOSFET blocking reverse voltage P-Channel, low RDS(on)
Battery Disconnect Master power switch 62.5W, 175°C max
Power Distribution ECU power domain switching AEC-Q101, 100% UIS tested
Solenoid Driver Inductive load control UIS capability, 29 mOhm
Fabricante Número de pieza Paquete Especificaciones Notas
Vishay SQS411ENW-T1_GE3 PowerPAK 1212-8 -40V, -16A, P-Channel Upgrade: Cu wire + wettable flanks
Infineon BSZ40P2P2E6327 PG-TSDSON-8 -40V, -17A, P-Channel Similar specs
ON Semi FDD6685 Power56 -40V, -16A, P-Channel Similar specs
ROHM RS1E200GNBTL HSMT8 -40V, -20A, P-Channel Higher current
Diodos Inc DMN4050SSS-13 SO-8 -40V, -10A, P-Channel Lower current, different pkg
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Envíos y pagos

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Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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