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SMLR5602T1G

NPN bias resistor transistor, 50V, 500mA, R1=R2=1kΩ, SOT-23-3

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Pieza del fabricante：

SMLR5602T1G

Paquete：

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The onsemi SMLR5602T1G is a bias resistor transistor (BRT) integrating an NPN transistor with built-in bias resistors (R1 = 1 kΩ, R2 = 1 kΩ) in a SOT-23-3 package. Designed for space-efficient digital switching applications, it eliminates external resistors and simplifies PCB layout.

Especificaciones

Polarity NPN
VCEO Max 50 V
IC Max 500 mA
R1 (Input Resistor) 1 kΩ
R2 (Base-Emitter Resistor) 1 kΩ
hFE Min 120
VCE(sat) Max 0.25 V @ Ic=50mA
Temperatura de funcionamiento -55 °C to +150 °C
Paquete SOT-23-3

Características

  • Single NPN pre-biased transistor with R1 = R2 = 1 kΩ
  • Low R1 (1 kΩ) enables direct drive from low-voltage logic
  • 500 mA collector current capability
  • Compact SOT-23-3 package
  • Eliminates two external resistors per switching channel
  • Pb-free, RoHS compliant

Aplicaciones

  • Relay and solenoid driver circuits
  • LED driver for indicator and backlight
  • Logic-level signal buffering
  • General-purpose switching in consumer electronics

The onsemi SMLR5602T1G is a single NPN bias resistor transistor (BRT) that integrates an NPN switching transistor with built-in base bias resistors (R1 = 1 kΩ, R2 = 1 kΩ) in a 3-pin SOT-23 package. The 1 kΩ input resistance is the lowest in the BRT family, providing the highest base drive current for a given input voltage — approximately 4.3 mA from a 5 V logic signal (5V – 0.7V / 1kΩ). Combined with the minimum hFE of 120, this supports collector currents up to 500 mA, making it one of the highest-current BRT options available. The device replaces a discrete transistor plus two external resistors with a single 3-pin component, simplifying schematic design, reducing BOM count, and saving PCB area. It is ideal for relay and solenoid drivers, LED control, and general-purpose digital switching where moderate current capability is needed.

The SMLR5602T1G integrates an NPN transistor with a series base resistor (R1 = 1 kΩ) and a parallel base-emitter shunt resistor (R2 = 1 kΩ) into a single 3-pin device. When a voltage above the turn-on threshold is applied to the input (B) pin, current flows through R1 into the transistor base, turning it on. The low 1 kΩ value of R1 provides high base drive current: at 5 V input, approximately 4.3 mA flows into the base, which with hFE of 120 can support 500 mA of collector current. R2 serves two purposes: (1) it provides a defined turn-off path for base leakage current, ensuring the transistor switches off cleanly when the input goes low; (2) it shunts away thermal leakage current that could cause parasitic turn-on at high temperatures. The 3-pin package (Input, Ground/Emitter, Output/Collector) provides the simplest possible connection: apply logic signal to input, connect emitter to ground, and the collector switches the load.

Pin Nombre Tipo Función
1 B Entrada Base input (via R1=1kΩ)
2 E Suelo Emitter (ground connection)
3 C Salida Collector (load connection)
  • Relay and solenoid driver in automotive and industrial control
  • LED indicator and backlight driver
  • MCU I/O expansion for higher-current loads
  • Logic-level signal inversion and buffering
Fabricante Número de pieza Paquete Notas
onsemi PDTA143ET SOT-23-3 PNP BRT, R1=4.7kΩ, R2=47kΩ
Rohm BRT12-3T SOT-23-3 NPN BRT, R1=1kΩ, R2=1kΩ
Nexperia PDTD123YT SOT-23-3 NPN BRT, R1=2.2kΩ, R2=47kΩ
Diodos Inc DTC143ZCAHZGT1G SOT-23-3 NPN BRT, R1=4.7kΩ, R2=47kΩ
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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