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SI2333DS-T1-GE3

P-ch MOSFET, -30V, -3.7A, 33mOhm, SOT-23, Vishay TrenchFET load switch

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Pieza del fabricante：

SI2333DS-T1-GE3

Paquete：

SOT-23-3 (TO-236AB, 2.9 x 1.3 x 1.0mm)

Marca：
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Descripción

Productos

The Vishay SI2333DS-T1-GE3 is a -30V P-channel MOSFET in SOT-23 (TO-236) package. With 33mOhm max RDS(ON) at -4.5V and -3.7A drain current, it provides high-efficiency load switching, battery disconnect, and power routing in portable devices. The TrenchFET technology ensures ultra-low on-resistance in a tiny footprint.

Especificaciones

Tipo P-Channel MOSFET
VDS -30V
VGS ±20V
ID (Max) -3.7A
RDS(ON) 33mOhm @ VGS=-4.5V
RDS(ON) 55mOhm @ VGS=-2.5V
Qg (Total) 12nC @ -4.5V
Threshold Voltage -0.85V (typical)
Power Dissipation 1.0W
Paquete SOT-23-3 (TO-236AB)
Temperatura de funcionamiento -55°C to +150°C

Características

  • Ultra-low 33mOhm RDS(ON) at -4.5V
  • TrenchFET technology
  • -3.7A continuous drain current
  • -30V rated for 12V/24V systems
  • SOT-23 tiny footprint
  • Logic-level gate drive compatible

Aplicaciones

  • Battery disconnect/load switch
  • Power routing in dual-battery systems
  • DC-DC converter high-side switch
  • Motor driver H-bridge (P-side)
  • Portable device power management

The Vishay SI2333DS-T1-GE3 is a -30V P-channel TrenchFET MOSFET in SOT-23 package with ultra-low 33mOhm RDS(ON) at -4.5V gate drive. It is one of the most popular P-channel load switch MOSFETs for battery-powered devices, providing high-side switching for power routing, battery disconnect, and load management in portable electronics.

The SI2333DS-T1-GE3 uses Vishay’s TrenchFET technology with a trench-gate structure that increases channel density and reduces cell size compared to planar MOSFETs. This achieves 33mOhm RDS(ON) in the tiny SOT-23 package. As a P-channel device, it is used as a high-side switch: pulling the gate below the source turns the MOSFET on, connecting the load to the supply. The logic-level threshold (-0.85V typical) allows direct drive from 2.5V or 3.3V logic.

Pin Nombre Tipo Función
1 G Entrada Puerta
2 S Potencia Fuente
3 D Salida Drenaje
  • Lithium battery disconnect switch in portable devices
  • Dual-battery power routing OR-ing
  • DC-DC converter high-side P-channel switch
  • Motor H-bridge P-side drive
  • USB power delivery load switching
Fabricante Número de pieza Paquete Notas
Vishay SI2337DS-T1-GE3 SOT-23 -20V, lower RDS(ON)
Infineon BSD215P SOT-23 -20V P-ch equivalent
Diodos Inc DMP3099L-7 SOT-23 -30V P-ch equivalent
onsemi NTR4101PT1G SOT-23 -20V P-ch load switch
Vishay SI2343DS-T1-GE3 SOT-23 -12V, even lower RDS(ON)
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