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SI2302CDS-T1-GE3

20V N-ch MOSFET, 62mOhm, logic-level, SOT-23-3

95000

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Pieza del fabricante：

SI2302CDS-T1-GE3

Paquete：

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

Marca：
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Descripción

Productos

The SI2302CDS-T1-GE3 from Vishay is a 20V N-channel TrenchFET MOSFET with 62mOhm RDS(on), 2.2A ID, and logic-level gate in SOT-23-3.

Especificaciones

VDS 20V
RDS(on) @ VGS=4.5V 62 mOhm max
RDS(on) @ VGS=2.5V 95 mOhm max
ID 2.2A
VGS(th) 0.65-1.2V
Qg 5.4 nC typical
Paquete SOT-23-3
Temperatura de funcionamiento -55 to +150 C (TJ)

Características

  • Ultra-low 62mOhm RDS(on) at 4.5V
  • Logic-level gate (0.65V min threshold)
  • Low 5.4nC gate charge
  • TrenchFET technology

Aplicaciones

  • Load switching in battery devices
  • DC-DC converter power stage
  • Battery management circuits
  • Motor drive

The SI2302CDS-T1-GE3 from Vishay is a 20V N-channel TrenchFET power MOSFET in SOT-23-3. The TrenchFET technology provides ultra-low 62mOhm RDS(on) at VGS=4.5V in a tiny SOT-23 package. The logic-level gate threshold (0.65V min) enables direct drive from 2.5V/3.3V logic. The low 5.4nC gate charge supports high-frequency switching. This device is one of the most popular small-signal MOSFETs for load switching and power management in portable electronics.

The SI2302CDS-T1-GE3 operates as a logic-level N-channel TrenchFET MOSFET. (1) The TrenchFET cell structure uses vertical trenches in the silicon to create the gate electrode, providing much higher channel density than planar MOSFETs. This results in the ultra-low 62mOhm RDS(on) at VGS=4.5V despite the tiny SOT-23-3 package. (2) The logic-level gate threshold of 0.65V minimum allows the MOSFET to be driven directly from 2.5V or 3.3V GPIO without a gate driver. At VGS=2.5V, the RDS(on) is still only 95mOhm max, providing efficient switching for battery-powered loads. (3) The 5.4nC total gate charge enables switching frequencies up to several hundred kHz with minimal gate drive loss. The 2.2A continuous drain current rating covers most portable electronics load requirements. The 20V VDS is compatible with single-cell Li-ion battery systems and 5V USB power.

Pin Nombre Descripción
1 GATE MOSFET gate drive output; connect to gate of external N-channel MOSFET through series resistor (1-10 Ohm)
2 SOURCE MOSFET source connection; connect to MOSFET source and current sense resistor
3 DRAIN MOSFET drain voltage sense; monitors forward voltage drop across MOSFET for regulation

Package: SOT-23-3 (MicroPak). VDS: 20 V. ID: 2.2 A continuous. RDS(on): 62 mOhm at VGS=4.5 V, 85 mOhm at VGS=2.5 V. VGS(th): 0.65 V min, 1.2 V typ, 1.5 V max. Total gate charge: 4.4 nC at 4.5 V. Thermal resistance Rth(j-a): 400 C/W on FR-4.

  • Battery-Powered Load Switching: 62 mOhm RDS(on) at 4.5 V gate drive minimizes conduction losses in 1-2 A load switch applications for portable electronics and wearables
  • DC-DC Converter Low-Side Switch: 2.2 A continuous drain current and 4.4 nC low gate charge make it suitable as synchronous buck converter low-side MOSFET at up to 2 MHz switching
  • Level Shifting (Bidirectional): Low VGS(th) of 0.65 V enables bidirectional I2C/SPI voltage level translation between 1.8 V and 5 V logic domains using two back-to-back MOSFETs
  • Battery Management Circuits: Logic-level gate drive compatible with 2.5 V MCU GPIO for battery disconnect and charge path control in Li-ion powered devices
  • Motor and Solenoid Driver: 2.2 A drain current capability for driving small vibration motors, solenoid valves, and relay coils in portable electronics
Modelo Fabricante Diferencia clave Paquete VDS/ID
SI2302DS-T1-GE3 Vishay Non-C suffix standard version with same 20V/2.2A ratings and 62mOhm RDS(on) SOT-23-3 20V/2.2A
SI2304DDS-T1-GE3 Vishay P-channel complement for high-side switching and push-pull MOSFET bridge designs SOT-23-3 -20V/-2.1A
2N7002K-7 Diodos Inc 60V/300mA N-channel MOSFET with higher VDS rating for voltage spike margin SOT-23-3 60V/300mA
PMV65XP NXP 60V/3.8A N-channel with ultra-low 25mOhm RDS(on) for high-efficiency load switching SOT-223-3 60V/3.8A
BSS138K-7 Diodos Inc 50V/220mA N-channel with ESD protection, ideal for level-shifting and open-drain buses SOT-23-3 50V/220mA

The SI2302CDS-T1-GE3 is a 20V N-channel MOSFET in SOT-23-3 with 62mOhm RDS(on) and 2.2A continuous drain current. The C suffix indicates ESD protection variant. For bidirectional level shifting, pair with the P-channel SI2304DDS complement. For higher voltage applications, 2N7002K provides 60V VDS rating.

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