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PHA-1+

UHD MMIC amp, 0.05-6GHz, +42 OIP3, 2.2dB NF, SOT-89

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Pieza del fabricante：

PHA-1+

Paquete：

SOT-89 (4.5 x 2.5 x 1.5 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The PHA-1+ is a Mini-Circuits ultra-high dynamic range MMIC amplifier using E-PHEMT with 0.05-6GHz bandwidth, +42dBm OIP3, +22.4dBm P1dB, 2.2dB NF, 13.5dB gain, +5V 146mA. Packaged in SOT-89.

Especificaciones

Frequency 50 – 6000 MHz
Gain 13.5 dB @ 2GHz
OIP3 +42 dBm @ 2GHz
P1dB +22.4 dBm @ 2GHz
NF 2.2 dB @ 2GHz
Paquete SOT-89

Características

  • 0.05 to 6GHz broadband operation
  • +42dBm ultra-high OIP3
  • +22.4dBm P1dB
  • 2.2dB noise figure
  • No external matching required
  • E-PHEMT technology
  • +5V single supply, 146mA

Aplicaciones

  • Base station driver amplifier
  • Linearized transmitter driver
  • High dynamic range receiver
  • CATV and broadband

The PHA-1+ is a Mini-Circuits ultra-high dynamic range monolithic amplifier using E-PHEMT technology in an SOT-89 package. The +42dBm typical OIP3 at 2GHz is exceptional for a device consuming only 146mA at +5V. The 20dB gap between OIP3 and P1dB indicates extremely linear operation. The 2.2dB NF combined with +42dBm OIP3 yields 39.8dB spurious-free dynamic range. Unlike competitive amplifiers, the PHA-1+ provides 14-21dB input and output return loss up to 4GHz without external matching. The 0.05-6GHz bandwidth covers all primary wireless bands. The + suffix indicates RoHS compliance.

The PHA-1+ uses a single-stage E-pHEMT amplifier with internal resistive feedback and active bias circuit. The E-pHEMT is a depletion-mode GaAs HEMT with enhancement-mode threshold, allowing single +5V supply operation. The resistive feedback from drain to gate provides gain flatness over 0.05-6GHz and improves return loss. The active bias circuit maintains constant 146mA quiescent current over temperature. The +42dBm OIP3 is achieved through high-linearity E-pHEMT characteristics at 146mA where transconductance derivative is minimized.

Pin Mnemonic Descripción
1 RF IN RF input (50 ohm matched)
2 GND Ground (thermal path)
3 RF OUT/VDD RF output and supply (50 ohm matched)
  • Base station driver amplifier with +42dBm OIP3 for LTE downlink
  • Ultra-high dynamic range receiver second stage with 39.8dB SFDR
  • Linearized transmitter driver where OIP3 exceeds P1dB by 20dB
  • CATV/DBS broadband amplifier covering 50MHz to 6GHz
Modelo Fabricante Diferencia clave
PHA-1H+ Mini-Circuits Similar, higher frequency
PHA-13LN+ Mini-Circuits Lower NF (0.8dB), 1GHz
SPA-2+ Mini-Circuits Higher gain, lower OIP3
WJA-5H+ Mini-Circuits Similar WJ equivalent
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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