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NRVUS110VT3G

AEC-Q101 100V 2A ultra-fast recovery diode, 35ns trr, 875mV Vf, SMB

9948

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Pieza del fabricante：

NRVUS110VT3G

Paquete：

SMB (DO-214AA, 5.9 x 3.6 x 2.3 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The NRVUS110VT3G is an onsemi AEC-Q101 qualified 100V, 2A ultra-fast recovery rectifier diode in SMB (DO-214AA) surface-mount package. With 35ns reverse recovery time and 875mV forward voltage at 1A, it is designed for automotive power supply and freewheeling applications.

Especificaciones

Reverse Voltage (Vr) 100V
Average Rectified Current (Io) 2A
Forward Voltage (Vf) @ If 875mV @ 1A
Reverse Recovery Time (trr) 35ns
Reverse Leakage Current (Ir) 2μA @ 100V
Temperatura de funcionamiento de la unión -65°C to +175°C
Cualificación AEC-Q101
Paquete SMB (DO-214AA)

Características

  • AEC-Q101 qualified for automotive applications
  • Ultra-fast recovery: 35ns typical
  • Low forward voltage: 875mV @ 1A
  • Low reverse leakage: 2μA @ 100V
  • High junction temperature: up to 175°C
  • Surface-mount SMB package
  • MSL 1 – Unlimited moisture sensitivity

Aplicaciones

  • Automotive DC-DC converter output rectification
  • Motor drive freewheeling diode
  • Reverse polarity protection
  • Automotive LED driver freewheeling
  • Industrial switching power supplies

The NRVUS110VT3G is an onsemi AEC-Q101 qualified 100V, 2A ultra-fast recovery rectifier diode in SMB (DO-214AA) surface-mount package. With 35ns reverse recovery time, 875mV forward voltage at 1A, and 2μA reverse leakage at 100V, it is designed for automotive power supply rectification, motor drive freewheeling, and reverse polarity protection. The wide -65°C to +175°C junction temperature range and MSL 1 rating ensure robust performance in demanding automotive environments.

The NRVUS110VT3G operates as a standard PN junction rectifier diode with optimized construction for ultra-fast reverse recovery. When forward-biased, current flows from anode to cathode with a forward voltage drop of 875mV at 1A. When the applied voltage reverses, the stored minority carriers in the junction must be swept out before the diode blocks—this is the reverse recovery time (trr). The NRVUS110VT3G achieves 35ns trr through optimized dopant profiles and carrier lifetime control, minimizing switching losses in high-frequency applications such as DC-DC converter output stages and motor drive freewheeling paths. The AEC-Q101 qualification ensures the device withstands automotive transient conditions.

Pin Mnemonic Descripción
1 Ánodo Positive terminal (current input)
2 Cátodo Negative terminal (barrier side, identified by marking band)
  • Automotive DC-DC buck converter output rectification at 100V/2A with 35ns recovery
  • Motor drive H-bridge freewheeling diode for inductive load current recirculation
  • Automotive 12V/24V reverse polarity protection with 100V breakdown margin
  • LED driver buck converter freewheeling path with ultra-fast recovery
  • Industrial SMPS secondary-side rectification with low switching loss
Modelo Fabricante Diferencia clave
SS34 MDD 40V, 3A Schottky, lower Vf
MURS120T3G onsemi 200V, 1A, same family
US1M Múltiples 1000V, 1A, SMB
SMBJ5.0A Littelfuse TVS diode, different function
NRVUS8120T3G onsemi 120V, 1A, same family higher voltage
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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