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PE4259-63

SPDT RF switch, 10MHz-6GHz, 0.4dB IL, 70dBm IIP3, 10μA, 1.65-3.6V, pSemi UltraCMOS

8740

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Pieza del fabricante：

PE4259-63

Paquete：

8-Lead DFN (2.5 x 2.5 x 0.9 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Manual del producto
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Descripción

Productos

The PE4259-63 is an RF switch from pSemi (formerly Peregrine Semiconductor), a Murata company specializing in high-performance RF CMOS solutions. This device is a single-pole, double-throw (SPDT) RF switch operating from 10MHz to 6000MHz with high linearity and low insertion loss. The -63 suffix denotes the specific configuration with integrated controller, housed in a compact surface mount package for cellular and wideband RF applications.

Especificaciones

Configuración SPDT
Frequency Range 10 MHz to 6000 MHz
Insertion Loss 0.4 dB (Typ) @ 2GHz
Isolation 30 dB (Typ) @ 2GHz
P0.1dB Input Power 37 dBm
IIP3 70 dBm (Typ)
Switching Time 500 ns
Tensión de alimentación 1.65V to 3.6V
Current Consumption 10 μA (Typ)
Temperatura de funcionamiento -40°C to +105°C

Características

  • Ultra-high IIP3 of 70dBm for superior linearity
  • Wide frequency range from 10MHz to 6000MHz covering all cellular bands
  • Low insertion loss of 0.4dB for minimal signal degradation
  • Micropower consumption of only 10μA typical
  • Integrated CMOS control logic with 1.8V compatible control
  • No external blocking capacitors required

Aplicaciones

  • Cellular handset antenna switching (2G/3G/4G/5G)
  • Diversity antenna switching in MIMO systems
  • IoT wireless module RF front-end switching
  • Software-defined radio antenna routing
  • Test equipment RF signal routing

The pSemi PE4259-63 is a high-linearity SPDT RF switch manufactured on pSemi’s UltraCMOS process, a silicon-on-sapphire (SOS) technology that provides exceptional RF performance with virtually no substrate losses. Covering 10MHz to 6000MHz, the switch handles all major cellular bands including 5G sub-6GHz. The device delivers an outstanding 70dBm IIP3 and 37dBm P0.1dB, making it one of the most linear RF switches available. Insertion loss of only 0.4dB at 2GHz and 30dB isolation ensure excellent signal integrity. The integrated CMOS control interface operates from 1.65V to 3.6V with just 10μA current consumption. No external DC blocking capacitors are required on the RF ports, simplifying PCB layout and reducing BOM cost.

The PE4259-63 operates using pSemi’s UltraCMOS silicon-on-sapphire (SOS) process, where RF switch transistors are fabricated on an insulating sapphire substrate. This eliminates parasitic junction capacitances and substrate losses that degrade performance in bulk silicon switches. The SPDT switch uses series-shunt transistor architecture: when a path is selected, the series transistor is on (low RON) and the shunt transistor is off; the unselected path has the series transistor off and the shunt transistor on to ground, providing isolation. The integrated CMOS control logic translates the 1.8V/3.3V control input to the appropriate gate bias voltages for the RF switch transistors. The 500ns switching time is achieved through optimized gate driver design.

Pin Nombre Tipo Función
1 ANT1 RF I/O RF port 1 (antenna or signal path 1)
2 GND Potencia Ground connection
3 ANT2 RF I/O RF port 2 (antenna or signal path 2)
4 CTRL Entrada Control input (selects ANT1 or ANT2)
5 VDD Potencia Supply voltage (1.65V to 3.6V)
6 GND Potencia Ground connection
7 RF1/RF2 RF I/O Common RF port
8 GND Potencia Ground connection
  • Cellular handset antenna switch module for 5G sub-6GHz
  • MIMO diversity antenna switching in base stations
  • IoT and LPWAN module RF front-end switching
  • Software-defined radio signal routing
  • Test equipment and instrumentation RF switching
Fabricante Número de pieza Paquete Notas
pSemi PE4240 DFN-12 SP4T, wider frequency range
Qorvo RFSW6042 LGA SPDT RF switch, 0.1-6GHz
Skyworks SKY13453-385LF DFN SPDT, 0.4-6GHz
ADI HMC253 LPCC-16 SPDT, DC-4GHz
NXP BGS12SL6 QFN-6 SPDT, 0.1-6GHz switch
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