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NVMFD5C466NLWFT1G

Dual N-ch MOSFET, 40V, 5.8mΩ, 40A, LFPAK-8, AEC-Q101

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Pieza del fabricante：

NVMFD5C466NLWFT1G

Paquete：

LFPAK-8 (5 x 6 x 1.0 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The onsemi NVMFD5C466NLWFT1G is a dual N-channel MOSFET featuring 40 V VDSS and 5.8 mΩ maximum RDS(on) per transistor at VGS = 10 V. Housed in a compact LFPAK (56-punch) package, it is AEC-Q101 qualified for automotive applications and designed for high-efficiency switching in DC-DC converters and motor drives.

Especificaciones

Configuración Dual N-Channel
VDSS 40 V
RDS(on) Max @ VGS=10V 5.8 mΩ
RDS(on) Max @ VGS=5V 7.5 mΩ
ID (per FET) 40 A
Qg (typ) 30 nC
Qgd (typ) 8 nC
Temperatura de funcionamiento -55 °C to +175 °C
Paquete LFPAK-8 (5 x 6 mm)

Características

  • Dual N-channel MOSFET in a single LFPAK package
  • Ultra-low RDS(on): 5.8 mΩ max at VGS = 10 V
  • AEC-Q101 qualified for automotive applications
  • High current capability: 40 A per channel
  • Low gate charge: 30 nC typical for efficient switching
  • 175 °C maximum junction temperature
  • LFPAK copper clip technology for superior thermal performance

Aplicaciones

  • Automotive DC-DC converter half-bridge stages
  • Motor drive H-bridge configurations
  • Battery management system switching
  • Load switch and power distribution

The onsemi NVMFD5C466NLWFT1G is a dual N-channel power MOSFET that integrates two 40 V, 40 A MOSFETs in a single LFPAK-8 package. Using onsemi’s copper clip technology, the LFPAK package provides superior thermal performance and current handling compared to traditional wire-bonded packages. The 5.8 mΩ maximum RDS(on) at VGS = 10 V minimizes conduction losses in high-current switching applications, while the 30 nC typical total gate charge enables efficient high-frequency operation. The dual configuration is ideal for half-bridge or synchronous buck converter topologies where both high-side and low-side switches are needed in close proximity. AEC-Q101 qualification and 175 °C maximum junction temperature rating ensure reliable operation in demanding automotive environments such as under-hood DC-DC converters and motor drive modules.

The NVMFD5C466NLWFT1G contains two independent N-channel enhancement-mode MOSFETs in a single LFPAK package. Each MOSFET operates as a voltage-controlled switch: when VGS exceeds the threshold voltage (typically 1.8 V), the gate oxide capacitance charges and an inversion layer forms in the P-body region, creating a conductive channel between drain and source. The extremely low RDS(on) of 5.8 mΩ is achieved through advanced trench MOSFET technology with optimized cell density and copper clip interconnection that reduces package parasitic resistance. The copper clip replaces traditional wire bonds, providing a large-area, low-resistance connection between the die and the package leads, improving both electrical and thermal performance. In a half-bridge configuration, one MOSFET serves as the high-side switch (connecting the load to the supply) and the other as the low-side switch (connecting the load to ground), with dead-time control preventing shoot-through current.

Pin Nombre Tipo Función
1 S1 Fuente MOSFET 1 source
2 S1 Fuente MOSFET 1 source (parallel)
3 G1 Puerta MOSFET 1 gate
4 S2 Fuente MOSFET 2 source
5 S2 Fuente MOSFET 2 source (parallel)
6 G2 Puerta MOSFET 2 gate
7 D2 Drenaje MOSFET 2 drain (common pad)
8 D1 Drenaje MOSFET 1 drain (common pad)
  • Automotive 12V-to-5V/3.3V DC-DC converter half-bridge stage
  • BLDC motor drive H-bridge power stage
  • Battery management system cell balancing switches
  • Automotive power distribution and load switch modules
Fabricante Número de pieza Paquete Notas
Infineon BSZ0910ND LFPAK-8 Dual N-ch, 40V, 9.1mΩ
NXP PHB1805NLT LFPAK-8 Dual N-ch, 40V, alternative
onsemi NVMFD5C454NLWFT1G LFPAK-8 Lower RDS(on) variant
Vishay SI7332DP-T1-GE3 PowerPAK-8 Dual N-ch, 30V, 3.2mΩ
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