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NTF3055L108T1G

60V 3A N-ch logic-level MOSFET, 120mOhm, SOT-223

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Pieza del fabricante：

NTF3055L108T1G

Paquete：

SOT-223 (6.5 x 3.5 x 1.57 mm)

Marca：
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Descripción

Productos

The NTF3055L108T1G from onsemi is a 60V N-channel logic-level power MOSFET with 120mOhm RDS(ON) at 5V VGS, 3A continuous drain current in SOT-223 package.

Especificaciones

VDS 60 V
VGS +/-15 V max
ID (continuo) 3 A @ 25C
RDS(ON) at VGS=5V 92 mOhm typical, 120 mOhm max
VGS(th) 1.0V min, 1.68V typ, 2.0V max
Gate Charge (Qg) 7.6 nC typical @ VGS=5V
Input Capacitance (Ciss) 313 pF typical
Power Dissipation 2.1 W @ 25C
Energía de avalancha (EAS) 74 mJ
Paquete SOT-223 (T1G suffix)
Temperatura de funcionamiento -55 to +175 C (TJ)

Características

  • Logic-level VGS(th) of 1.68V typical for 3.3V/5V drive
  • 120mOhm max RDS(ON) at VGS=5V
  • 74mJ single-pulse avalanche energy rating
  • Low gate charge of 7.6nC for fast switching
  • AEC qualified for automotive applications

Aplicaciones

  • Low-voltage power supply switching
  • DC-DC converter power stage
  • Motor drive and bridge circuits
  • Automotive load switching
  • Battery-powered equipment power management

The NTF3055L108T1G from onsemi is a 60V N-channel logic-level power MOSFET in SOT-223 package, designed for low-voltage high-speed switching applications. The device features 120mOhm max RDS(ON) at VGS=5V, 3A continuous drain current, and 1.68V typical gate threshold voltage for direct 3.3V or 5V logic-level drive. The 7.6nC typical gate charge enables fast switching with minimal drive power. The 74mJ single-pulse avalanche energy rating provides robustness against inductive transients. The T1G suffix denotes tape and reel packaging with Pb-free finish.

The NTF3055L108T1G operates as an N-channel enhancement-mode power MOSFET. (1) The vertical DMOS cell structure provides low RDS(ON) (92mOhm typical at VGS=5V) through optimized cell density and channel design. The logic-level gate threshold (1.68V typical) allows the device to be fully enhanced with 3.3V or 5V gate drive, eliminating the need for gate drive circuitry in low-voltage systems. (2) The 7.6nC gate charge at VGS=5V enables fast switching transitions with minimal switching losses. The turn-on delay time of 11ns and rise time of 35ns support high-frequency PWM operation in DC-DC converters and motor drives. (3) The 74mJ avalanche energy rating protects against inductive kickback when switching inductive loads such as relay coils and motor windings. The active clamp structure absorbs the energy from the inductor during turn-off, preventing device failure from overvoltage.

Pin Nombre Función
1 Puerta MOSFET gate (logic level)
2 Drenaje MOSFET drain (tab also drain)
3 Fuente MOSFET source
4 Drenaje MOSFET drain (tab, connected to pin 2)
  • Low-voltage DC-DC converter power stage with logic-level drive
  • Motor drive H-bridge and half-bridge circuits
  • Automotive load switching with 60V rating
  • Battery-powered equipment power management with 3.3V gate drive
  • Relay and solenoid driver with avalanche protection
Modelo Fabricante Diferencia clave
2N7002K-7 Diodos 60V, 0.3A, SOT-23
FDN359AN onsemi 30V, 2.7A, lower RDS(ON)
IRLML2502TRPBF Infineon 12V, 4.2A, logic level, SOT-23
SI2302DS-T1-GE3 Vishay 20V, 2.2A, SOT-23
BSS138-7-F Diodos 50V, 0.22A, SOT-23
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