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NTD5865NLT4G

N-ch MOSFET, 60V, 46A, 16mOhm RDS(on), 29nC Qg, DPAK, -55 to 175C

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Pieza del fabricante：

NTD5865NLT4G

Paquete：

DPAK / TO-252-3 (6.5 x 5.5 x 2.3 mm)

Marca：
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Descripción

Productos

The NTD5865NLT4G from onsemi is an N-channel power MOSFET rated at 60V/46A with ultra-low RDS(on) of 16 mOhm at VGS=10V. Built on advanced trench technology, it features low gate charge (29 nC), 100% avalanche tested, and is housed in a DPAK (TO-252) surface-mount package for high-efficiency power switching applications.

Especificaciones

VDS 60V
ID 46A (TC=25C)
RDS(on) @ 10V 16 mOhm (max)
RDS(on) @ 4.5V 19 mOhm (typ)
VGS(th) 2.0V (typ)
Qg (Total Gate Charge) 29 nC @ 10V
Power Dissipation 71W (TC=25C)
Paquete DPAK / TO-252-3
Temperatura de funcionamiento -55 to 175 C (Tj)

Características

  • Ultra-low RDS(on) of 16 mOhm for minimal conduction losses
  • 100% avalanche tested for rugged switching applications
  • Low gate charge of 29 nC for efficient high-frequency switching
  • Logic-level gate threshold compatible with 3.3V/5V MCUs
  • +/-20V gate-source voltage rating
  • Low thermal resistance: 2.1 C/W junction-to-case

Aplicaciones

  • DC-DC converters and voltage regulators
  • Motor drive and H-bridge circuits
  • Power management and load switches
  • Battery management systems
  • Industrial power supplies

The NTD5865NLT4G from onsemi is a high-performance N-channel power MOSFET rated at 60V drain-source voltage and 46A continuous drain current. Utilizing advanced trench technology, it achieves an ultra-low RDS(on) of 16 mOhm at VGS=10V, minimizing conduction losses in high-current switching applications. The device features low gate charge of 29 nC for efficient high-frequency switching, logic-level gate threshold for direct MCU drive, and 100% avalanche testing for rugged reliability. Packaged in DPAK (TO-252), it is ideal for DC-DC converters, motor drives, and power management circuits.

The NTD5865NLT4G is an enhancement-mode N-channel MOSFET where current flows from drain to source when a positive gate-source voltage exceeds the threshold (approximately 2.0V). The gate voltage creates an inversion layer in the P-body region, connecting the N+ source to the N-drift region. The trench gate structure increases channel density, reducing RDS(on) while maintaining compact die area. During switching, the gate charge (29 nC) must be supplied or removed to charge or discharge the gate capacitance. The body diode provides a natural freewheeling path in inductive switching.

Pin Nombre Tipo Función
1 G Entrada Gate terminal (control input)
2 D Potencia Drain terminal (tab/heatsink)
3 S Potencia Source terminal
  • DC-DC converters: Low-side switch in synchronous buck regulators
  • Motor drives: H-bridge and half-bridge for BLDC motor control
  • Load switches: High-current power path switching
  • Battery management: Charge/discharge path control in BMS
Fabricante Número de pieza Paquete Notas
Infineon IRFR3806TRPBF DPAK 60V, 50A, 13mOhm
Vishay SI7860DP-T1-GE3 PowerPAK SO-8 60V, 50A, 12mOhm
TI CSD18534Q5A SON-5×6 60V, 100A, 6.8mOhm
AOS AON6262E DFN-5×6 60V, 80A, 8.5mOhm
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