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NRVBA160NT3G

60V 1A Schottky rectifier, 510mV VF, SMA, AEC-Q101, guard ring, automotive

9830

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Pieza del fabricante：

NRVBA160NT3G

Paquete：

SMA / DO-214AC (4.32 x 2.60 x 2.00 mm)

Marca：
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Descripción

Productos

The NRVBA160NT3G from onsemi is a 60V, 1A Schottky barrier rectifier in an SMA (DO-214AC) package. With 510mV forward voltage at 1A and AEC-Q101 qualification, it is designed for low-voltage high-frequency rectification and freewheeling in automotive applications.

Especificaciones

VRRM 60 V
IO 1 A (average rectified)
VF (max) 0.51 V @ 1A
IR (max) 200 µA @ 60V
IFSM (surge) 60 A peak
Technology Schottky Barrier
Paquete SMA (DO-214AC)
Junction Temperature -55°C to +150°C
Cualificación AEC-Q101

Características

  • 60V/1A Schottky barrier rectifier with ultra-low 510mV forward voltage
  • Guard ring construction for stress protection and reliable operation
  • AEC-Q101 qualified for automotive applications with NRVBA prefix
  • Compact SMA package with J-bend leads for automated assembly
  • Low reverse leakage and high surge current capability (60A)

Aplicaciones

  • Low-voltage high-frequency rectification in automotive DC-DC converters
  • Freewheeling diode in motor drive and inverter circuits at 60V
  • Reverse polarity protection and power OR-ing in automotive systems

The NRVBA160NT3G from onsemi is a surface-mount Schottky barrier power rectifier rated at 60V and 1A in an SMA (DO-214AC) package. The device employs the Schottky Barrier principle with epitaxial construction and oxide passivation. The 510mV maximum forward voltage at 1A provides significantly lower conduction loss compared to standard PN junction rectifiers, making it ideal for low-voltage high-frequency applications. The guard ring structure provides stress protection and enhances reliability. The NRVBA prefix designates automotive qualification per AEC-Q101. The device is suitable for freewheeling, polarity protection, and low-voltage rectification in automotive and industrial power systems.

The NRVBA160NT3G is a Schottky barrier diode (SBD) that uses a metal-semiconductor junction rather than a PN junction. The rectifying junction is formed between a metal and N-type silicon. Unlike PN junction diodes where both electrons and holes contribute to conduction, the Schottky diode is a majority-carrier device with no minority carrier storage, resulting in lower forward voltage drop and faster switching. A P-type guard ring surrounds the Schottky contact to protect the junction edge from high electric fields and reverse bias stress, improving reliability and preventing premature breakdown.

Pin Nombre Función
1 Cátodo Cathode (indicated by band on body)
2 Ánodo Ánodo
  • Low-voltage high-frequency freewheeling in automotive DC-DC converters
  • Reverse polarity protection and power OR-ing at 60V and 1A
  • Automotive motor drive and solenoid clamp diode applications
Fabricante Número de pieza Paquete Notas
onsemi MBRA160T3G SMA Non-automotive version
onsemi SBRA8160NT3G SMA AEC-Q101 alternate
Vishay SS16T3G SMA 60V 1A Schottky
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Email: info@materialparts.com
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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