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NCS20072DR2G

Dual CMOS op-amp, 3MHz GBW, 2.7-36V, R-R output, 5pA Ibias, SOIC-8

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Pieza del fabricante：

NCS20072DR2G

Paquete：

SOIC-8 (3.9 x 4.9 x 1.75 mm)

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Descripción

Productos

The NCS20072DR2G from onsemi is a dual CMOS operational amplifier featuring rail-to-rail output, 3 MHz gain bandwidth, and a wide supply voltage range of 2.7V to 36V in an SOIC-8 package. With only 405 uA quiescent current per channel and 5 pA input bias current, it is ideal for battery-powered and high-impedance sensor interface applications across industrial and automotive systems.

Especificaciones

Canales 2 (dual)
Supply Voltage Range 2.7V to 36V (single) or +/-1.35V to +/-18V (split)
Gain Bandwidth Product 3 MHz typ
Velocidad de giro 2.4 V/us typ
Tensión de offset de entrada 1.3 mV typ
Corriente de polarización de entrada 5 pA typ
Corriente de reposo 405 uA per channel typ
Corriente de salida 70 mA sink / 50 mA source
CMRR 110 dB typ
Temperatura de funcionamiento -40°C to +125°C
Paquete SOIC-8 (3.9 x 4.9 mm)

Características

  • Rail-to-rail output maximizes dynamic range
  • Wide supply range from 2.7V to 36V
  • Ultra-low input bias current (5 pA) for high-Z sensors
  • Low quiescent current (405 uA/channel) for battery applications
  • PSRR of 135 dB typ for noisy supply environments
  • NCV prefix variants AEC-Q100 qualified for automotive

Aplicaciones

  • Current sensing and signal conditioning
  • Automotive sensor interfaces
  • Notebook and portable instrument power supplies
  • Battery-powered monitoring circuits
  • High-impedance transducer amplifiers

The onsemi NCS20072DR2G is a dual CMOS operational amplifier from the NCx2007x series providing rail-to-rail output operation, 3 MHz bandwidth, and wide supply voltage range from 2.7V to 36V. In a compact SOIC-8 package, it delivers a slew rate of 2.4 V/us while consuming only 405 uA quiescent current per channel. The CMOS input stage provides extremely low input bias current of 5 pA typical, making it ideal for interfacing with high-impedance signal sources such as piezoelectric sensors, photodiodes, and pH probes. The device achieves 110 dB CMRR and 135 dB PSRR, ensuring robust performance in noisy environments. Automotive-qualified variants are available under the NCV20072 prefix.

The NCS20072DR2G uses a CMOS input stage followed by a folded-cascode gain stage and a rail-to-rail output stage. The CMOS input provides picoampere-level bias currents, enabling direct connection to high-impedance sensors without loading the signal source. The internal compensation ensures stability with capacitive loads up to several hundred picofarads. The rail-to-rail output stage uses complementary PMOS and NMOS transistors to swing within millivolts of both supply rails, maximizing the usable output voltage range. The 3 MHz gain-bandwidth product provides adequate loop bandwidth for most signal conditioning applications, while the 2.4 V/us slew rate ensures faithful reproduction of transient signals. The wide supply range allows operation from a single lithium cell to industrial 24V or 36V rails.

Pin Nombre Descripción
1 1OUT Channel 1 Output
2 1IN- Channel 1 Inverting Input
3 1IN+ Channel 1 Non-Inverting Input
4 VSS/GND Negative Supply or Ground
5 2IN+ Channel 2 Non-Inverting Input
6 2IN- Channel 2 Inverting Input
7 2OUT Channel 2 Output
8 VDD Positive Supply (2.7-36V)
  • Current Sensing: High-side and low-side current measurement with 36V supply capability and 110 dB CMRR rejecting common-mode bus voltage
  • Automotive Sensors: NCV-qualified variants for engine management, fuel level, and battery monitoring in 12V/24V vehicle systems
  • Portable Instruments: 405 uA per channel from a 2.7V supply enables long battery life in handheld measurement tools
  • Photodiode Amplifiers: 5 pA input bias current minimizes dark current error in transimpedance amplifier configurations
  • Industrial Signal Conditioning: 135 dB PSRR ensures clean output in electrically noisy factory environments with switching loads
Modelo Marca GBW (MHz) Vs Range (V) Iq/ch (uA)
MCP6002-I/SN Microchip 1 1.8-6 100
LM358DR TI 1.1 3-32 500
TSV912IDT ST 8 2.5-5.5 950
TLV9152DR TI 4.5 2.7-24 560
NCV20072DR2G onsemi 3 2.7-36 405
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