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MMBT2222A

NPN 40V 600mA gen-purpose transistor, 300MHz fT, SOT-23-3, hFE 100-300

12400

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Pieza del fabricante：

MMBT2222A

Paquete：

SOT-23-3 (2.92 x 1.30 x 0.93 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The MMBT2222A from onsemi is a general-purpose NPN bipolar junction transistor in a SOT-23-3 surface-mount package. Rated at 40V VCEO and 600mA continuous collector current with 300MHz transition frequency, it is suitable for medium-power amplification and switching applications.

Especificaciones

Polarity NPN
VCEO 40 V
VCBO 75 V
VEBO 6.0 V
IC (continuous) 600 mA
VCE(sat) max 0.3 V @ IC=150mA, IB=15mA
hFE (at 150mA) 100-300
fT 300 MHz
Power Dissipation 350 mW
Paquete SOT-23-3
Temperatura de funcionamiento -55°C to +150°C
Status Obsolete (use MMBT2222ALT1G)

Características

  • 40V NPN general-purpose amplifier and switch in SOT-23 package
  • 300MHz current gain-bandwidth product for high-frequency switching
  • hFE 100-300 at 150mA for reliable drive capability
  • Low saturation voltage of 0.3V at 150mA collector current
  • Process 19 technology with proven reliability

Aplicaciones

  • Medium-power switching and general-purpose amplification
  • Driver circuits for relays, LEDs, and small loads
  • General-purpose discrete logic level translation and buffering

The MMBT2222A from onsemi (formerly Fairchild) is an NPN general-purpose bipolar junction transistor designed for medium-power amplification and switching requiring collector currents up to 500mA. Sourced from Process 19, the device features a VCEO of 40V, transition frequency of 300MHz, and DC current gain of 100-300 at 150mA. The SOT-23-3 surface-mount package enables compact PCB designs. The device is marked 1P on the package top. Note: The MMBT2222A is listed as obsolete; the recommended replacement is MMBT2222ALT1G or MMBT2222ALT3G with AEC-Q101 qualification.

The MMBT2222A is a standard NPN bipolar junction transistor (BJT). (1) Forward Active: When the base-emitter junction is forward-biased (VBE > 0.6V) and the base-collector junction is reverse-biased, electrons are injected from the emitter into the base region. Most electrons diffuse across the thin base and are collected by the collector, producing a collector current IC that is a multiple (hFE) of the base current IB. (2) Saturation: When both junctions are forward-biased, VCE drops to the saturation voltage VCE(sat), typically 0.3V at IC=150mA. The transistor acts as a closed switch. (3) Cutoff: When IB=0, only a small leakage current ICEO flows, and the transistor acts as an open switch. (4) High-Frequency: The 300MHz fT indicates the frequency at which the common-emitter current gain drops to unity, determining the useful bandwidth for amplifier applications.

Pin Nombre Función
1 Base Base (control input)
2 Emisor Emisor
3 Colector Colector
  • Medium-power switching for relays, solenoids, and LED strings at 40V
  • General-purpose signal amplification in audio and control circuits
  • Logic-level buffering and driver circuits in SOT-23 footprint
Fabricante Número de pieza Paquete Notas
onsemi MMBT2222ALT1G SOT-23-3 AEC-Q101, recommended replacement
Diodos Inc MMBT2222A-7-F SOT-23-3 AEC-Q101, active
Nexperia MMBT2222A,215 SOT-23-3 AEC-Q101, active
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