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MJD44E3T4G

NPN power transistor, 40V, 12A, 75W, DPAK-3

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Pieza del fabricante：

MJD44E3T4G

Paquete：

DPAK / TO-252-3 (6.5 x 5.5 x 2.3 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The MJD44E3T4G is an onsemi NPN power bipolar junction transistor with 80V VCEO, 5A continuous collector current, 20W power dissipation, 40-160 hFE gain, and 50MHz transition frequency. Packaged in DPAK (TO-252-3), -65C to +150C.

Especificaciones

VCEO 80 V
IC (cont) 5 A
Pd 20 W (Tc)
hFE 40-160 @ 500mA
fT 50 MHz
VCE(sat) 0.5V max @ 1A
Paquete DPAK (TO-252-3)

Características

  • 80V VCEO for medium-voltage switching
  • 5A continuous collector current
  • 20W power dissipation at Tc
  • 40-160 DC current gain range
  • 50MHz transition frequency
  • Low VCE(sat) for reduced conduction loss
  • AEC-Q101 qualified (MJD44E3T4G)

Aplicaciones

  • Automotive lamp drivers
  • Solenoid and relay drivers
  • Motor drive output stages
  • Power switching and regulation

The MJD44E3T4G is an onsemi NPN bipolar junction power transistor in a DPAK (TO-252-3) surface-mount package. The device features a 40V collector-emitter voltage rating (VCEO), 12A continuous collector current, and 75W power dissipation at TC=25C, making it suitable for medium-power switching and linear applications. The low VCE(sat) of 0.5V maximum at IC=5A minimizes conduction losses in switching applications. The high DC current gain (hFE of 20 minimum at IC=5A) reduces base drive requirements. The DPAK package provides excellent thermal performance with the exposed collector tab enabling efficient heatsinking through the PCB copper area. The device is suitable for use in low-voltage inverters, motor drivers, and power switching circuits where NPN bipolar transistors are preferred over MOSFETs for simplicity or cost.

The MJD44E3T4G operates as a current-controlled NPN bipolar junction transistor (BJT). A small base current (IB) controls a much larger collector current (IC) with the current gain (hFE = IC/IB) typically 20-100 at IC=5A. In the saturation region, both the base-emitter and base-collector junctions are forward-biased, and VCE drops to the saturation voltage (VCE(sat) of 0.5V max at IC=5A). The base charge storage effect causes a delay during turn-off as the stored minority carriers in the base region must be removed before the collector current falls. The Safe Operating Area (SOA) defines the permissible combinations of VCE and IC to avoid secondary breakdown and thermal destruction. The power dissipation is limited by the junction-to-case thermal resistance (1.67 C/W) and the maximum junction temperature (150C).

Pin Mnemonic Descripción
1 Base Base terminal
2 Collector (tab) Collector terminal (exposed pad)
3 Emisor Emitter terminal
  • Low-voltage DC motor H-bridge driver at 24V with 12A peak collector current capability
  • Linear voltage regulator pass transistor at 40V with 75W dissipation on PCB heatsink
  • Solenoid and relay driver with 0.5V VCE(sat) minimizing conduction loss at 5A
  • LED matrix constant-current sink with hFE=20 providing adequate gain at 5A
Modelo Fabricante Diferencia clave
MJD45E3T4G onsemi PNP complementary, -40V, -12A
MJD44H11T4G onsemi 80V, 8A, higher voltage
TIP122 onsemi Darlington, 100V, 5A, TO-220
FDD8583 onsemi N-ch MOSFET, 40V, DPAK
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