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MJD31CT4G

3A 100V NPN Power Transistor, DPAK, TIP31C Equivalent

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Pieza del fabricante：

MJD31CT4G

Paquete：

DPAK / TO-252-3 (6.6 x 6.0 x 2.3 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The MJD31CT4G from onsemi is a 3A, 100V NPN complementary power transistor in a DPAK (TO-252) surface mount package, electrically similar to the TIP31C.

Especificaciones

Tipo NPN Complementary Power Transistor
Polarity NPN
VCEO 100 V
IC (continuous) 3 A
IC (peak) 5 A
PD (TC=25C) 15 W
PD (TA=25C) 1.56 W
hFE (min) 10 @ IC=3A, VCE=4V
hFE (max) 50 @ IC=1A, VCE=4V
VCE(sat) 1.2 V (max) @ IC=3A, IB=375mA
VBE(on) 1.8 V (max) @ IC=3A
fT 3 MHz (min)
Paquete DPAK / TO-252-3
Temperatura de funcionamiento -65C to +150C (TJ)

Características

  • 3A continuous collector current
  • 100V VCEO (MJD31C version)
  • 15W power dissipation at TC=25C
  • DPAK surface mount package
  • Electrically similar to TIP31C
  • Complementary PNP: MJD32CT4G
  • AEC-Q101 qualified (NJV prefix versions)

Aplicaciones

  • General-purpose audio amplifiers
  • Low-speed power switching
  • Motor driver output stage
  • Power supply regulator pass transistor

The MJD31CT4G from onsemi is an NPN complementary power transistor in a DPAK (TO-252) surface mount package, rated at 3A and 100V. The device is electrically similar to the industry-standard through-hole TIP31C, providing a surface-mount alternative for the same circuit topologies. The 100V VCEO covers 24V and 48V industrial systems with adequate margin. The 15W power dissipation at case temperature of 25C requires proper PCB copper area for heat sinking. The complementary PNP device (MJD32CT4G) enables push-pull amplifier and bridge motor drive configurations. The T4G suffix indicates tape and reel packaging in a DPAK with formed leads. AEC-Q101 qualified versions are available with the NJV prefix for automotive applications.

The MJD31CT4G is a vertical NPN bipolar junction transistor (BJT) constructed using a planar epitaxial process. The N-type epitaxial layer forms the collector region on an N+ substrate. The P-type base and N+ emitter are diffused into the epitaxial layer. Current flow is vertical from emitter (top) through the base and epitaxial collector to the collector (die pad). When forward base current (IB) is applied, minority carriers (holes) are injected from the base into the emitter region, modulating the emitter-base junction conductivity. The collector current (IC) is amplified by the DC current gain (hFE), which ranges from 10 to 50 depending on the operating point. The 3 MHz transition frequency (fT) limits the useful bandwidth for amplifier applications. The VCE(sat) of 1.2V at 3A represents the power dissipation in the saturated switching state: P = IC x VCE(sat) = 3.6W. The DPAK package connects the collector to the large die pad for efficient heat transfer to the PCB copper.

Pin Nombre Tipo Función
1 Base Entrada Base terminal
2 Colector E/S Collector (tab/die pad is also collector)
3 Emisor E/S Emitter terminal
Pestaña Colector E/S Collector (die pad, solder to PCB)
  • 24V DC motor H-bridge driver with complementary MJD32CT4G PNP
  • Audio power amplifier output stage in Class AB push-pull configuration
  • Linear voltage regulator pass transistor with 15W dissipation capability
  • Solenoid driver low-side switch with 3A current rating
Fabricante Número de pieza Paquete Notas
onsemi MJD31CG DPAK-3 Same device, tube packaging
onsemi NJVMJD31CT4G DPAK-3 AEC-Q101 automotive version
ST BDX53C DPAK Similar 100V NPN in DPAK
onsemi MJD32CT4G DPAK-3 Complementary PNP device
onsemi MJD31CT1G IPAK Same die, IPAK through-hole
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