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MJ802G

30A 90V NPN power transistor, hFE 25-100, 200W, TO-3, audio amp output

3200

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Pieza del fabricante：

MJ802G

Paquete：

TO-204-2 / TO-3 (39.37 x 26.67 x 7.43 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The MJ802G from onsemi is a 30A, 90V NPN bipolar power transistor in a TO-204 (TO-3) package, designed as an output device for complementary audio amplifiers to 100W per channel. Complement to the PNP MJ4502.

Especificaciones

Tipo NPN Bipolar Power Transistor
VCEO 90 V
VCBO 100 V
IC (continuous) 30 A
IB 7.5 A
hFE @ IC=7.5A 25 to 100
VCE(sat) @ IC=7.5A 0.8 V max
VBE(sat) @ IC=7.5A 1.3 V max
fT 2.0 MHz min
Power Dissipation 200 W @ TC=25°C
Thermal Resistance 0.875 °C/W junction-to-case
Temperatura de funcionamiento -65°C to +200°C
Paquete TO-204-2 (TO-3)

Características

  • 30A/90V NPN power transistor with 200W dissipation in TO-3 package
  • High DC current gain hFE=25-100 at IC=7.5A for audio output stage
  • Excellent safe operating area for linear audio amplifier applications
  • Complementary PNP MJ4502 for push-pull amplifier designs

Aplicaciones

  • Complementary audio amplifier output stage to 100W per channel
  • High-power linear regulator pass transistor
  • Power switching and motor control applications

The MJ802G from onsemi is a high-power NPN silicon bipolar transistor designed specifically for use as an output device in complementary audio amplifiers delivering up to 100 watts of music power per channel. The device features a high DC current gain of 25 to 100 at IC=7.5A, ensuring adequate drive capability for audio output stages. The 200W power dissipation rating at TC=25C with 0.875C/W thermal resistance enables robust operation in linear amplifier configurations. The excellent safe operating area (SOA) allows the device to handle the simultaneous voltage and current stress encountered in audio output stages without entering secondary breakdown. The G suffix indicates Pb-free construction. The complementary PNP device is the MJ4502, enabling push-pull amplifier designs with matched NPN/PNP characteristics.

The MJ802G is a high-power NPN bipolar junction transistor (BJT) designed for linear audio amplifier applications. (1) NPN BJT: The device has a three-layer N-P-N structure. When the base-emitter junction is forward-biased (VBE > 0.6V), base current flows and the transistor enters the active region where collector current IC = hFE x IB. The high hFE (25-100 at 7.5A) reduces the required base drive current. (2) Safe Operating Area: The SOA curves define the maximum allowable combinations of VCE and IC that avoid secondary breakdown, a failure mechanism unique to power BJTs where localized hot spots cause thermal runaway. The MJ802G’s generous SOA is critical for linear audio amplifiers where the output devices operate simultaneously at high voltage and high current. (3) Complementary Operation: In a push-pull Class-AB audio amplifier, the MJ802G (NPN) handles the positive half-cycles while the MJ4502 (PNP) handles the negative half-cycles. The complementary pair must have matched hFE, VBE, and SOA characteristics for low crossover distortion.

Pin Nombre Función
1 B Base
2 E Emisor
Case C Collector (connected to case)
  • Complementary audio amplifier output to 100W per channel with MJ4502
  • High-power linear regulator pass transistor at up to 200W
  • Power switching and DC motor drive in TO-3 package
Fabricante Número de pieza Paquete Notas
onsemi MJ15003G TO-3 20A, 140V, higher voltage
onsemi 2N3055 TO-3 15A, 60V, lower power
ST 2N3055 TO-3 15A, 60V, ST brand
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