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IRFB4321PBF

150V N-ch MOSFET, 12mOhm, 85A, 71nC Qg, TO-220AB, StrongIRFET

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Pieza del fabricante：

IRFB4321PBF

Paquete：

TO-220AB (10.67 x 4.82 x 9.02mm, 3-pin, through-hole)

Marca：
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Descripción

Productos

The IRFB4321PBF from Infineon Technologies is a 150V N-channel StrongIRFET power MOSFET in a TO-220AB through-hole package. With 12mΩ typical RDS(on) at 10V, 85A continuous drain current, and 71nC gate charge, it is optimized for low-frequency switching applications requiring high current capability and low conduction losses.

Especificaciones

VDS 150V
ID (TC=25°C) 85 A
RDS(on) Typ @ VGS=10V 12 mΩ
RDS(on) Max @ VGS=10V 15 mΩ
VGS(th) 3.0V to 5.0V
Qg Total Gate Charge 71 nC typ (110 nC max)
Qgd (Miller Charge) 21 nC typ
Power Dissipation 350W (TC=25°C)
RθJC 0.43°C/W
EAS (Single Pulse Avalanche) 120 mJ
Body Diode trr 89 ns typ
Temperatura de funcionamiento -55 to +175°C
Paquete TO-220AB (3-pin, through-hole)

Características

  • StrongIRFET family optimized for low RDS(on) and high current
  • Very low RDS(on): 12mΩ typical
  • 85A continuous current capability
  • ±30V gate-source voltage rating (enhanced robustness)
  • Fully characterized avalanche SOA
  • Improved body diode recovery
  • Industry-standard TO-220AB package
  • Lead-free (PbF) termination

Aplicaciones

  • DC motor and motion control
  • Battery management systems
  • Inverters and UPS
  • Convertidores CC-CC
  • Synchronous rectification in SMPS

The IRFB4321PBF from Infineon is a 150V N-channel StrongIRFET MOSFET in TO-220AB with 12mΩ typical RDS(on) at VGS=10V and 85A drain current. 71nC gate charge with 21nC Miller charge. ±30V gate voltage rating provides enhanced robustness. 350W power dissipation with 0.43°C/W RθJC. 120mJ single-pulse avalanche rating. PBF suffix denotes lead-free. Optimized for low-frequency high-current applications below 100kHz.

Uses Infineon HEXFET planar technology with vertical DMOS structure. The gate charge of 71nC requires adequate gate drive current for desired switching speed. At 2.5Ω external gate resistance, typical turn-on delay is 18ns with 60ns rise time. The ±30V VGS rating is significantly higher than typical ±20V, providing additional margin against gate voltage transients. The body diode has 89ns reverse recovery time with 300nC recovery charge, suitable for hard-switched applications but not optimal for high-frequency synchronous rectification. The 120mJ avalanche energy rating provides self-protection against unclamped inductive switching transients.

Pin Nombre Tipo Función
1 Puerta Entrada Gate control terminal
2 Drenaje Drenaje Drain terminal (connected to tab)
3 Fuente Fuente Source terminal
Pestaña Drenaje Drenaje Drain tab (heatsink mounting surface)
  • 48V battery management system with 85A switching capability
  • DC motor H-bridge driver at 48V/60V bus voltage
  • Low-frequency inverter output stage below 100kHz
  • UPS transfer switch with high surge current handling
  • Solar charge controller at 48V with low conduction losses
Fabricante Número de pieza Paquete Notas
Infineon IRFB4321TRLPBF D2PAK SMD version of same die
onsemi FDB86360_F085 TO-220 100V, 6.5mΩ, lower voltage alternative
Infineon IRFB4310PBF TO-220 100V, 5.6mΩ, lower voltage lower RDS(on)
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