HMC564LC4TR


ADI GaAs pHEMT LNA, 6~20GHz, 22dB gain, 2.5dB NF, +14dBm P1dB, QFN-24

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Pieza del fabricante:

HMC564LC4TR

Paquete:

QFN-24 (4mm x 4mm x 1.42mm, air-cavity LCP lid)

Marca:
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Descripción

Productos

The HMC564LC4TR from Analog Devices/Hittite is a wideband GaAs pHEMT MMIC low-noise amplifier covering 6GHz to 20GHz. With 22dB typical gain, 2.5dB noise figure, and +14dBm output P1dB in a 4mm x 4mm QFN-24 package, it provides high dynamic range LNA performance for microwave radio, VSAT, radar, and electronic warfare applications.

Especificaciones

Frequency Range 6GHz ~ 20GHz
Small-Signal Gain 22dB typical (mid-band)
Noise Figure 2.5dB typical (mid-band)
Output P1dB +14dBm
Output IP3 +26dBm
Input Return Loss 15dB typical
Output Return Loss 12dB typical
Tensión de alimentación +5V
Supply Current 80mA typical
Temperatura de funcionamiento -40C ~ +85C

Características

  • Ultra-wideband 6GHz to 20GHz coverage in a single device
  • Low 2.5dB noise figure for sensitive receiver front-ends
  • High +26dBm OIP3 for excellent linear dynamic range
  • +14dBm P1dB output power for driving subsequent stages
  • On-chip RF I/O matching to 50 ohm simplifies PCB design

Aplicaciones

  • Microwave point-to-point radio receivers
  • VSAT terminal LNB and transceiver
  • Radar receiver front-ends
  • Electronic warfare and SIGINT receivers
  • Test equipment low-noise amplification

The HMC564LC4TR from Analog Devices (formerly Hittite Microwave) is a wideband GaAs pHEMT MMIC low-noise amplifier operating from 6GHz to 20GHz. The device delivers 22dB of typical small-signal gain with a 2.5dB noise figure in the mid-band, providing the sensitivity and dynamic range required for microwave receiver front-ends. The output P1dB of +14dBm and output IP3 of +26dBm ensure that the amplifier can handle strong interferers without generating excessive distortion, critical for co-site and jamming environments. The RF input and output are internally matched to 50 ohms, requiring only external DC blocking capacitors and bias inductors for operation. The amplifier is powered from a single +5V supply drawing 80mA typical, with gate bias pins (VG, VG2) for adjusting the drain current and optimizing the noise figure versus linearity trade-off. The QFN-24 air-cavity package with LCP lid provides excellent RF performance and thermal characteristics.

The HMC564LC4TR uses a two-stage GaAs pHEMT amplifier topology. The first stage is optimized for low noise figure with a high-quality input match network that presents the optimal source impedance (Gamma-opt) to the gate of the first pHEMT device. The second stage is optimized for gain and linearity, providing the majority of the output power capability. Both stages share the +5V drain supply, with separate gate bias pins (VG for stage 1, VG2 for stage 2) that allow independent adjustment of the quiescent drain current. The gate bias voltages are typically set using resistive voltage dividers or active bias controllers. RF chokes on the drain bias lines isolate the RF signal from the power supply, while DC blocking capacitors on the RF input and output prevent the bias voltages from appearing on the external RF ports. The on-chip matching networks transform the device impedances to 50 ohms, eliminating the need for external matching components.

Tampón Nombre Función
5 RF IN RF Input (50-ohm matched)
11 VG Stage 1 Gate Bias
16 RF OUT / VD RF Output / Drain Bias (DC fed through)
21 VD2 Stage 2 Drain Bias
23 VG2 Stage 2 Gate Bias
1,2,4,6,7,12,13,15,17,19,24,25 GND Suelo
3,8,9,10,14,20,22 N/C Sin conexión
  • Microwave radio: Serve as the first LNA in 7GHz, 11GHz, 13GHz, 15GHz, or 18GHz point-to-point radio receivers with 2.5dB NF
  • VSAT terminals: Amplify the downconverted satellite signal in Ku-band (12~18GHz) VSAT LNB modules with 22dB gain
  • Radar receivers: Provide low-noise amplification in X-band (8~12GHz) and Ku-band (12~18GHz) radar receiver front-ends
  • Electronic warfare: Detect and amplify weak threat signals in SIGINT and RWR systems from 6~20GHz with high dynamic range
  • Test equipment: Boost signal levels in microwave test setups and spectrum analyzer front-ends with minimal added noise
Modelo Marca Freq Range NF Gain
HMC519LC4 ADI 6~26GHz 3.5dB 14dB
HMC7511LC4 ADI 6~18GHz 2.2dB 20dB
MAAL-011129 MACOM 6~18GHz 2.0dB 22dB
CHA3093-99F United Monolithic 6~18GHz 2.5dB 20dB
TGA2570-SM Qorvo 6~18GHz 2.5dB 18dB
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Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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