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FQU17P06TU

P-ch MOSFET, -60V, -12A, 135mOhm, IPAK

3810

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Pieza del fabricante：

FQU17P06TU

Paquete：

IPAK / TO-251-3 (6.8 x 2.5 x 7.6 mm)

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Descripción

Productos

The FQU17P06TU is an onsemi P-channel enhancement mode power MOSFET rated at -60V, -12A, with 135mOhm max RDS(on) in an IPAK (TO-251-3) through-hole package. Designed using planar stripe and DMOS technology for low on-resistance and superior switching performance. -55C to +150C. (Last Shipments)

Especificaciones

Channel Type P-Channel
VDS -60 V
ID (Tc=25C) -12 A
RDS(on) Max 135 mOhm @ VGS=-10V
Gate Charge (typ) 21 nC @ 10V
Power Dissipation 2.5 W (Ta), 44 W (Tc)
Paquete IPAK / TO-251-3

Características

  • -12A, -60V, 135mOhm max RDS(on)
  • Low gate charge (typ 21 nC)
  • Low Crss (typ 80 pF)
  • 100% avalanche tested
  • 175C max junction temperature rating
  • Pb-free and halide free device

Aplicaciones

  • LED TV power management
  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control and load switches

The FQU17P06TU is an onsemi P-channel enhancement mode power MOSFET in an IPAK (TO-251-3) through-hole package. Using onsemi proprietary planar stripe and DMOS technology, the device achieves low on-state resistance of 135mOhm max at VGS=-10V with -60V drain-source voltage rating and -12A continuous drain current at Tc=25C. The low gate charge of 21nC typical and low reverse transfer capacitance of 80pF typical enable efficient high-frequency switching. The device is 100% avalanche tested for ruggedness in inductive load applications. The 175C maximum junction temperature rating provides thermal margin. The IPAK package offers through-hole mounting with a tab for heat sinking, suitable for power supply and motor control applications where surface-mount packages may not provide adequate thermal performance.

The FQU17P06TU operates as a P-channel enhancement mode MOSFET. When a negative voltage is applied between gate and source (VGS more negative than the threshold voltage of -2.0V to -4.0V), an inversion layer forms at the silicon surface under the gate oxide, connecting the P+ source and P+ drain regions. Current flows from source to drain when VDS is negative. The DMOS cell structure with planar stripe geometry provides a high density of parallel cells, reducing specific on-resistance per unit area. The body-drain diode provides a freewheeling path for inductive loads.

Pin Mnemonic Descripción
1 G Puerta
2 D Drain (connected to tab)
3 S Fuente
  • LED TV power supply high-side P-channel load switch with -60V rating for backlight inverter
  • SMPS P-channel synchronous rectifier in 12V output stage with 135mOhm RDS(on)
  • Audio amplifier output stage with 21nC gate charge for efficient class-D switching
  • DC motor H-bridge high-side driver with through-hole IPAK for thermal management
Modelo Fabricante Diferencia clave
FQP17P06 onsemi TO-220 package, -17A higher current
FQU17P06TM onsemi DPAK surface-mount version
IRF9Z34NPBF Infineon -60V, -12A, TO-220
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