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FQT5P10TF

P-ch MOSFET, -100V, -4.1A, SOT-223

8175

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Pieza del fabricante：

FQT5P10TF

Paquete：

SOT-223 (6.5 x 3.5 x 1.8mm)

Marca：
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Descripción

Productos

FQT5P10TF from onsemi is a P-channel enhancement MOSFET. -100V VDS, -4.1A ID, 0.5 ohm RDS(on) at -10V. SOT-223.

Principio de funcionamiento

P-channel MOSFET. Negative VGS creates conduction channel. 0.5 ohm RDS(on) at -10V. -100V rating for high-side switching. SOT-223 for medium power dissipation.

Pin Description

Pin Nombre Función
1 Puerta Gate drive
2-3 Drenaje Drain (tab)
4 Fuente Fuente

Aplicaciones

  • High-side load switch
  • Power management
  • Battery disconnect

Alternative Models

Fabricante Número de pieza Notas
onsemi FQP5P10 TO-220 version

FQT5P10TF from onsemi is a P-channel enhancement MOSFET. -100V VDS, -4.1A ID, 0.5 ohm RDS(on) at -10V. SOT-223.

P-channel MOSFET. Negative VGS creates conduction channel. 0.5 ohm RDS(on) at -10V. -100V rating for high-side switching. SOT-223 for medium power dissipation.

Pin Nombre Función
1 Puerta Gate drive
2-3 Drenaje Drain (tab)
4 Fuente Fuente
  • High-side load switch
  • Power management
  • Battery disconnect
Fabricante Número de pieza Notas
onsemi FQP5P10 TO-220 version
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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