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FGL60N100BNTDTU

1000V 60A NPT trench IGBT, 2.5V Vcesat, co-pack diode, TO-264

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Pieza del fabricante：

FGL60N100BNTDTU

Paquete：

TO-264-3 (20.0 x 5.3 x 26.0 mm)

Marca：
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Descripción

Productos

The FGL60N100BNTDTU from onsemi is a 1000V, 60A NPT trench IGBT with integrated anti-parallel fast recovery diode in a TO-264-3 through-hole package. With VCE(sat) of 2.5V at 60A and 275nC gate charge, it is optimized for hard-switching applications such as UPS and welder power stages.

Especificaciones

VCE(sat) 1000 V
IC (Continuous) 60 A @ TC=25C
IC (Pulse) 120 A
VCE(sat) 2.5V typical @ IC=60A, VGE=15V
VCE(sat) Max 2.9V @ IC=60A, VGE=15V
Gate Charge (QG) 275 nC
Turn-On Delay 140 ns
Turn-Off Delay 630 ns
Reverse Recovery Time (trr) 1.2 us
Power Dissipation 180 W @ TC=25C
Temperatura de funcionamiento -55 to +150 C (TJ)
Paquete TO-264-3

Características

  • 1000V NPT trench IGBT technology
  • 60A continuous collector current
  • VCE(sat) = 2.5V typical at 60A
  • Integrated anti-parallel fast recovery diode
  • 275nC gate charge for moderate drive requirements
  • High avalanche ruggedness
  • Easy parallel operation due to positive VCE(sat) tempco
  • Optimized for hard switching applications

Aplicaciones

  • Uninterruptible power supplies (UPS)
  • Welding equipment
  • Motor drive inverters
  • Induction heating

The FGL60N100BNTDTU from onsemi (formerly Fairchild) is a 1000V, 60A NPT (Non-Punch-Through) trench IGBT with an integrated anti-parallel fast recovery diode in a TO-264-3 through-hole package. The TD suffix denotes tube packaging. Using onsemi’s proprietary trench design and advanced NPT technology, it offers VCE(sat) of 2.5V typical at IC=60A with positive temperature coefficient for easy paralleling. The co-packaged anti-parallel diode with 1.2us reverse recovery time enables use in half-bridge and full-bridge inverter topologies without external freewheeling diodes. The device is optimized for hard-switching applications with high avalanche ruggedness. Note: This device is marked as Not For New Designs (NFND) on the onsemi website.

The FGL60N100BNTD operates through three subsystems: (1) NPT Trench IGBT Structure: A Non-Punch-Through trench gate structure provides 1000V blocking capability with low VCE(sat) of 2.5V at 60A. The trench gate geometry increases channel density compared to planar structures, reducing on-state voltage drop. The NPT construction provides a positive temperature coefficient of VCE(sat), ensuring current sharing when multiple devices are paralleled. (2) Anti-Parallel Diode: An integrated fast recovery diode is co-packaged with the IGBT die, providing a freewheeling current path for inductive loads. The 1.2us reverse recovery time and soft recovery characteristic minimize switching losses and EMI in bridge topologies. (3) Switching Behavior: Turn-on delay is 140ns and turn-off delay is 630ns at 600V/60A with 51Ohm gate resistance. The 275nC gate charge requires a moderate gate driver. The IGBT exhibits tail current during turn-off (characteristic of NPT technology), which contributes to turn-off switching losses.

Pin Nombre Tipo Descripción
1 Puerta Entrada Gate drive input (VGE max +/-25V)
2 Colector Potencia Collector terminal (connected to tab)
3 Emisor Potencia Emitter terminal
Pestaña Colector Potencia Collector (heatsink mount)
  • UPS inverter half-bridge with 1000V/60A rating and co-packaged anti-parallel diode
  • Welding power supply with 2.5V low VCE(sat) at 60A minimizing conduction losses
  • Motor drive inverter with positive VCE(sat) tempco enabling easy parallel operation
  • Induction heating power stage with high avalanche ruggedness and 1.2us fast recovery diode
Modelo Fabricante VCE IC Notas
FGH60N60SMD onsemi 600V 60A Lower voltage, faster
IKW75N120T2 Infineon 1200V 75A Higher voltage/current
STGWA40M120DF3 ST 1200V 40A Mesa trench IGBT
FGA60N65SMD onsemi 650V 60A Field-stop, faster switch
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