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FGH75T65SHDTL4

650V 75A Field Stop Trench IGBT, 1.6V VCE(sat), TO-247-4LD Kelvin, 175C, co-pack diode

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Pieza del fabricante：

FGH75T65SHDTL4

Paquete：

TO-247-4LD (21.00 x 15.80 x 4.70 mm, Kelvin emitter)

Marca：
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Descripción

Productos

The FGH75T65SHDTL4 from onsemi is a 650V, 75A Field Stop Trench IGBT in a TO-247-4LD package with Kelvin emitter. With 1.6V typical VCE(sat) and 175C max junction temperature, it targets solar inverters, UPS, welders, and PFC applications.

Especificaciones

VCES 650 V
IC (TC=25C) 150 A
IC (TC=100C) 75 A
VCE(sat) 1.6 V (typ at IC=75A)
Switching Loss (Ets) 2.62 mJ (typ at 400V/75A)
Gate Charge (Qg) 126 nC (typ)
Max TJ 175C

Características

  • 3rd generation Field Stop Trench IGBT for low conduction and switching losses
  • Kelvin emitter (4-lead TO-247) for reduced gate loop inductance
  • 1.6V typical saturation voltage at 75A for high efficiency
  • 175C maximum junction temperature for high-temperature operation
  • Positive temperature coefficient for easy parallel operation
  • Co-packaged anti-parallel diode for inductive load switching

Aplicaciones

  • Solar inverters and energy storage systems
  • UPS and telecom power supplies
  • Welding equipment and PFC boost converters
  • Motor drives and industrial inverters

The FGH75T65SHDTL4 from onsemi is a 650V, 75A Field Stop 3rd generation Trench IGBT in a TO-247-4LD package with Kelvin emitter connection. The 4-lead package separates the gate return path from the high-current power emitter, significantly reducing common-source inductance and improving switching performance, especially during turn-off transients. The Field Stop Trench technology provides an optimal balance of low conduction loss (1.6V typical VCE(sat) at 75A) and low switching loss (2.62mJ total Ets at 400V/75A), making it ideal for high-frequency hard-switching applications. The co-packaged anti-parallel diode is rated for 125A forward current at TC=25C, providing robust freewheeling capability for inductive loads. The 175C maximum junction temperature enables operation in high-temperature environments or with increased power dissipation. The positive VCE(sat) temperature coefficient ensures balanced current sharing when multiple devices are paralleled. Gate charge of 126nC keeps drive power requirements manageable. The device is 100% tested for pulsed collector current (ILM) rating of 300A.

The FGH75T65SHDTL4 is an N-channel IGBT combining MOS gate control with bipolar current conduction. (1) Gate Control: Applying VGE > VGE(th) (typically 5.5V) creates an inversion layer (channel) under the gate, connecting the emitter to the N- drift region. Electrons flow from emitter through the channel into the drift region, modulating the conductivity. (2) Conductivity Modulation: The electron current forward-biases the P+ collector/N- drift junction, injecting holes into the drift region. The injected holes reduce the drift region resistance by orders of magnitude, enabling high current density with low VCE(sat) of 1.6V. (3) Field Stop: A thin N+ buffer layer between the N- drift and P+ collector creates the field stop structure, allowing a thinner drift region than conventional PT-IGBTs while maintaining 650V blocking capability. The thinner drift region reduces on-state loss. (4) Turn-Off: Removing the gate voltage eliminates the channel, stopping electron injection. The stored holes in the drift region recombine, causing the characteristic current tail. The Field Stop structure reduces the tail current duration and magnitude. (5) Kelvin Emitter: The separate E1 (Kelvin) and E2 (power) emitter connections eliminate the voltage drop across the emitter bond wire inductance from the gate drive loop, providing cleaner VGE during switching and reducing turn-off losses.

Pin Nombre Tipo Función
1 G Entrada Gate drive input
2 E1 Salida Kelvin emitter (gate return)
3 C Salida Collector (high-voltage terminal)
4 E2 Salida Power emitter (load current return)
  • Solar inverters and energy storage systems at 650V/75A with 1.6V VCE(sat)
  • UPS and telecom power supplies with Kelvin emitter for clean switching
  • Welding equipment and PFC boost converters at 175C max junction
  • Motor drives and industrial inverters with co-packaged diode
Fabricante Número de pieza Paquete Notas
onsemi FGH75T65SHDTLN4 TO-247-3 3-lead version, no Kelvin
onsemi FGHL75T65MQDTL4 TO-247-4LD 4th gen, 1.45V VCE(sat)
Infineon IKW75N65EH7 TO-247-3 650V, 75A, TrenchStop
ST STGW75H65DFB TO-247-4LD 650V, 75A, Kelvin emitter
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