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FDV303N

N-ch MOSFET, 25V, 0.68A, 500mΩ RDS(on), logic-level, SOT-23

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Pieza del fabricante：

FDV303N

Paquete：

SOT-23 (2.9 x 1.3 x 1.0 mm)

Marca：
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Descripción

Productos

The FDV303N from onsemi is a 25V N-channel enhancement mode MOSFET in SOT-23 package with logic-level gate drive, designed for low voltage switching in battery-powered applications.

Especificaciones

Fabricante onsemi
Channel Type N-Channel
VDS 25V
ID 0.68A
RDS(on) @ VGS=4.5V 500 mΩ max
RDS(on) @ VGS=2.5V 850 mΩ max
VGS(th) 0.65V to 1.2V
Power Dissipation 0.35W
Paquete SOT-23
Temperatura de funcionamiento -55°C to +150°C

Características

  • Low threshold voltage for logic-level drive
  • RDS(on) specified at 2.5V gate drive
  • Compact SOT-23 package
  • Fast switching
  • Enhancement mode (normally off)

Aplicaciones

  • Low voltage load switching
  • Battery-powered circuits
  • Logic-level power control
  • Small signal switching

The FDV303N from onsemi is an N-channel enhancement mode MOSFET in SOT-23 with 25V VDS, 0.68A ID, and 500 mΩ RDS(on) at VGS=4.5V. The low 0.65-1.2V threshold allows direct drive from 2.5V logic. The compact footprint and low cost make it popular for general-purpose switching in battery-powered and low-voltage applications.

The FDV303N is a voltage-controlled switch. When VGS exceeds the threshold (0.65-1.2V), the N-channel conducts from drain to source. Enhancement mode means normally off at VGS=0V. Low threshold enables direct interface with 2.5V or 3.3V logic.

Pin Nombre Función
1 G Puerta
2 S Fuente
3 D Drenaje
  • Logic-level load switching
  • Battery-powered power control
  • Level shifting and signal gating
  • LED switching circuits
Fabricante Número de pieza Notas
onsemi 2N7002LT1G Industry standard N-MOSFET
Nexperia BSS138P Logic-level N-MOSFET
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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