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FDS8984

30V 7A N-ch MOSFET, 23mOhm, DC-DC sync rect, SOIC-8

5300

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Pieza del fabricante：

FDS8984

Paquete：

SOIC-8 (5.0 x 6.2 x 1.75 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The FDS8984 from onsemi is a 30V N-channel PowerTrench MOSFET with 23mOhm RDS(ON) at 10V, 7A drain current, optimized for DC-DC converter synchronous rectification in SOIC-8 package.

Especificaciones

VDS 30 V
VGS +/-20 V max
ID (continuo) 7 A
RDS(ON) at VGS=10V 23 mOhm max
RDS(ON) at VGS=4.5V 30 mOhm max
Gate Charge (Qg) Low (100% Rg tested)
Power Dissipation 1.6 W
Avalanche Energy 32 mJ
Thermal Resistance (RJA) 78 C/W
Paquete SOIC-8
Temperatura de funcionamiento -55 to +150 C (TJ)

Características

  • 23mOhm max RDS(ON) at VGS=10V for low conduction losses
  • 30mOhm RDS(ON) at VGS=4.5V for logic-level drive
  • Optimized for synchronous and conventional DC-DC converters
  • Low gate charge for fast switching
  • Pb-free and halogen-free

Aplicaciones

  • DC-DC converter synchronous rectifier
  • Point-of-load buck converter power stage
  • Motor drive and load switch
  • Battery-powered DC-DC converter
  • Industrial power supply switching

The FDS8984 from onsemi is a 30V N-channel PowerTrench MOSFET optimized for DC-DC converter applications including synchronous rectification. The device features 23mOhm max RDS(ON) at VGS=10V and 30mOhm max at VGS=4.5V, providing low conduction losses for high-efficiency power conversion. The 7A continuous drain current rating and low gate charge make it suitable for synchronous buck converters and point-of-load regulators. The PowerTrench technology combines low RDS(ON) with fast switching speed for minimal switching losses. The SOIC-8 package provides good thermal performance with 78 C/W thermal resistance.

The FDS8984 operates as an N-channel enhancement-mode PowerTrench MOSFET. (1) The PowerTrench cell structure uses a trench gate architecture that increases channel density and reduces cell size, resulting in 23mOhm max RDS(ON) at VGS=10V. The 30mOhm RDS(ON) at VGS=4.5V enables logic-level drive for 5V gate drive systems. (2) The low gate charge design minimizes the energy required to switch the MOSFET on and off, reducing switching losses in high-frequency PWM converters. The 100% Rg testing ensures consistent switching performance across production lots. (3) The 32mJ avalanche energy rating provides protection against voltage spikes from parasitic inductance in the PCB layout. The device is optimized for the low-side synchronous rectifier position in buck converters, where low RDS(ON) is critical for efficiency, and fast body diode reverse recovery reduces dead-time losses.

Pin Nombre Función
1 S1 Fuente
2 S1 Fuente
3 S1 Fuente
4 G1 Puerta
5 D2 Drenaje
6 D2 Drenaje
7 D2 Drenaje
8 G2 Gate (second MOSFET in same pkg)
  • DC-DC converter synchronous rectifier with 23mOhm RDS(ON)
  • Point-of-load buck converter power stage at 4.5V gate drive
  • Motor drive H-bridge with 7A current rating
  • Battery-powered DC-DC converter with low gate charge
  • Industrial power supply switching with avalanche protection
Modelo Fabricante Diferencia clave
FDS8984-F40 onsemi Same die, different test flow
FDS6690A onsemi 30V, 12A, lower RDS(ON)
IRF7821TRPBF Infineon 30V, 10A, SOIC-8
SI4850BDY-T1-GE3 Vishay 30V, 8.5A, SOIC-8
AO4407A Alpha&Omega 30V, 12A, SOIC-8
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