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FDD8876

-30V P-ch MOSFET, 19mOhm, -12A, DPAK-3

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Pieza del fabricante：

FDD8876

Paquete：

DPAK / TO-252-3 (6.5 x 5.5 x 2.3 mm)

Marca：
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Descripción

Productos

The FDD8876 is an onsemi N-channel power MOSFET with 30V VDS, 30A drain current, 6.5mOhm max RDS(on) at 10V, and 35W power dissipation. Packaged in DPAK (TO-252-3) with exposed tab, -55C to +175C.

Especificaciones

VDS 30 V
RDS(on) max 6.5 mOhm @ 10V
ID 30 A
Qg 35 nC typ
Vgs(th) 1.0V to 2.0V
Pd 35 W (Tc)
Paquete DPAK (TO-252-3)

Características

  • 30V N-channel MOSFET
  • 6.5mOhm ultra-low RDS(on)
  • 30A continuous drain current
  • Logic-level gate threshold (1.0-2.0V)
  • 35nC gate charge
  • DPAK with exposed tab for thermal management
  • Rugged and reliable

Aplicaciones

  • DC-DC converter synchronous rectifier
  • Motor drive and control
  • Battery protection and management
  • Load switch and power switching

The FDD8876 is an onsemi P-channel enhancement-mode power MOSFET in a DPAK (TO-252-3) surface-mount package. The device features a -30V drain-source voltage rating with extremely low 19 mOhm typical on-resistance at VGS=-10V and -12A continuous drain current. The low RDS(on) enables high-efficiency switching in battery-powered and low-voltage power management applications where conduction losses must be minimized. The DPAK package provides excellent thermal dissipation through the exposed drain tab, with a junction-to-case thermal resistance of 2.0 C/W. The device features low gate charge (42 nC typical at VGS=-10V) for efficient high-frequency switching. The P-channel architecture simplifies high-side switching designs by eliminating the need for bootstrap gate drive circuits required by N-channel MOSFETs.

The FDD8876 operates as a voltage-controlled P-channel MOSFET. Applying a negative gate-source voltage (VGS) below the threshold (typically -1.0V) creates an inversion layer in the N-body region, forming a conduction channel between source and drain. In high-side switch applications, the source connects to the positive supply rail and the drain to the load; pulling the gate to ground (VGS = -VIN) fully enhances the MOSFET. The trench-gate cell structure maximizes channel density per unit area, achieving the low 19 mOhm on-resistance. The body diode between source and drain provides a natural free-wheeling path for inductive loads. During turn-off, the gate charge (42 nC) must be removed through the gate driver, determining the turn-off time and associated switching losses.

Pin Mnemonic Descripción
1 Puerta Gate terminal
2 Drain (tab) Drain terminal (exposed pad)
3 Fuente Source terminal
  • 12V battery high-side load switch at 10A with 19mOhm RDS(on) for only 1.9W conduction loss
  • DC-DC converter synchronous rectifier (high-side P-ch) in 12V-to-3.3V buck at 500kHz
  • Power routing and OR-ing in dual-battery systems with body diode blocking
  • Motor H-bridge high-side switch at 24V with -12A continuous current capability
Modelo Fabricante Diferencia clave
FDS8876 onsemi Same die, SOIC-8 package
FDD86102 onsemi -30V, 22mOhm, -9.8A, DPAK
IRFR9310TRPBF Infineon -30V, 45mOhm, -4.3A, DPAK
AOD4185 AOS -30V, 16mOhm, -15A, DPAK
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