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FDC6312P

P-channel MOSFET, -20V, -1.7A, 75mΩ @ -4.5V, SuperSOT-6, low threshold for load switching

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Pieza del fabricante：

FDC6312P

Paquete：

SOT-23-6 (SuperSOT-6)

Marca：
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Descripción

Productos

The FDC6312P from onsemi (formerly Fairchild Semiconductor) is a P-channel enhancement-mode power MOSFET in a compact SOT-23-6 (SuperSOT-6) package. Designed for load switching and power management applications, it features a -20 V drain-source rating, -1.7 A continuous drain current, and low on-resistance, making it suitable for battery-powered portable devices where space and power efficiency are critical.

Especificaciones

Channel Type P-Channel Enhancement
VDS (Drain-Source Voltage) -20 V
ID (Continuous Drain Current) -1.7 A
RDS(ON) Max 75 mΩ @ VGS = -4.5 V
VGS(th) -0.6 V to -1.5 V
Gate Charge (Qg) 6.5 nC typical
Power Dissipation 1.25 W
Temperatura de funcionamiento -55°C to 150°C (TJ)
Paquete SOT-23-6 (SuperSOT-6)

Características

  • Very low 75 mΩ on-resistance at VGS = -4.5 V for efficient switching
  • Compact SuperSOT-6 package with improved thermal performance vs. SOT-23-3
  • Low threshold voltage (-0.6 V to -1.5 V) for logic-level drive compatibility
  • Low gate charge (6.5 nC) for fast switching with minimal drive power

Aplicaciones

  • Battery load switching in portable electronics
  • Li-ion battery pack protection circuits
  • Power management in handheld devices
  • DC-DC converter high-side switch
  • Notebook and tablet power path selection

The FDC6312P from onsemi is a P-channel enhancement-mode power MOSFET housed in a SuperSOT-6 (SOT-23-6) package. It features a -20 V drain-source voltage rating and a continuous drain current of -1.7 A, with a very low on-resistance of 75 mΩ maximum at VGS = -4.5 V. The low threshold voltage range (-0.6 V to -1.5 V) makes it compatible with logic-level drive signals from MCUs and power management ICs. The SuperSOT-6 package provides improved thermal performance and higher power dissipation (1.25 W) compared to standard SOT-23-3 packages, making it ideal for load switching and battery protection in portable electronics.

The FDC6312P operates as a voltage-controlled P-channel switch: (1) Enhancement Mode — at VGS = 0 V (gate at source potential), the MOSFET is off with no channel formed; (2) Turn-On — applying a negative gate-to-source voltage below the threshold (-0.6 V to -1.5 V) creates a P-type inversion channel, allowing hole current to flow from source to drain; (3) On-State — at VGS = -4.5 V, the channel is fully enhanced with RDS(ON) of 75 mΩ max, providing efficient conduction; (4) SuperSOT-6 Advantage — the 6-pin package dedicates separate pins for source, drain, and gate connections (two source pins for lower parasitic inductance and better thermal dissipation), enabling 1.25 W power handling in a compact footprint.

Pin Nombre Función
1 Fuente Source terminal (connect to supply rail)
2 Puerta Gate terminal (drive negative relative to source to turn on)
3 Fuente Source terminal (parallel with Pin 1 for lower inductance)
4 Drenaje Drain terminal (connect to load)
5 Drenaje Drain terminal (parallel with Pin 4)
6 Drenaje Drain terminal (parallel with Pin 4)
  • Smartphone battery load switch controlled by PMIC with 1.7 A current capability and 75 mΩ RDS(ON)
  • Li-ion battery pack overcurrent protection MOSFET with low threshold for MCU GPIO drive
  • Notebook PC USB port power switching with SuperSOT-6 thermal performance for 1.25 W dissipation
  • Tablet device power path selection between battery and adapter using back-to-back P-MOSFET configuration
  • Wearable device battery management with logic-level gate drive from a 1.8 V power management IC
Modelo Fabricante Diferencia clave
FDC6312L onsemi N-channel companion device in same package
FDN360P onsemi -20 V, -2.2 A, 42 mΩ in SuperSOT-6
SI2301DS Vishay -20 V, -2.2 A, SOT-23-3
AO3401A Alpha & Omega -30 V, -4 A, SOT-23-3
IRLML6402 Infineon -20 V, -3.7 A, very low RDS(ON), SOT-23-3
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