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DTC143ZET1G

NPN digital transistor with built-in R1=4.7kOhm/R2=4.7kOhm, 50V VCEO, 100mA IC in ultra-compact SC-105 (1.6x0.8mm)

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Pieza del fabricante：

DTC143ZET1G

Paquete：

SC-105 / SOT-523F (1.60 x 0.80 x 0.50 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The DTC143ZET1G from onsemi is an NPN digital transistor with built-in bias resistors in an ultra-compact SC-105 (SOT-523F) package measuring just 1.6 x 0.8mm. It integrates R1=4.7kOhm and R2=4.7kOhm resistors (Z suffix), eliminating external bias components and simplifying circuit design for digital logic interfacing.

Especificaciones

Tipo NPN Digital Transistor (Built-in Resistors)
Built-in R1 4.7kOhm
Built-in R2 4.7kOhm
VCEO 50V
IC (Continuous) 100mA
Input Voltage (VIN) Up to 10V
hFE (DC Current Gain) ~30 @ VIN=5V
Power Dissipation 150mW @ TA=25°C
Paquete SC-105 (SOT-523F) (1.6 x 0.8mm)
Temperatura de funcionamiento -55°C ~ +150°C

Características

  • Integrated base resistors eliminate external bias components
  • Ultra-compact SC-105 package for maximum board space savings
  • Direct digital logic drive capability (CMOS/TTL compatible)
  • Resistor values (R1=R2=4.7kOhm) optimized for 5V logic interfacing
  • Lead-free and RoHS compliant
  • Reduces component count and PCB area

Aplicaciones

  • Digital logic level interfacing
  • LED indicator drivers
  • Relay and solenoid low-side drivers
  • Signal inversion (NOT gate function)
  • Motor driver pre-drivers

The DTC143ZET1G from onsemi is an NPN digital transistor with integrated bias resistors designed for direct digital logic-to-power interfacing. The device incorporates a 4.7kOhm input resistor (R1) and 4.7kOhm base-emitter shunt resistor (R2), eliminating the need for external bias components. This integration reduces component count, simplifies PCB layout, and improves reliability. The Z suffix indicates R1=R2=4.7kOhm, providing a DC current gain of approximately 30 at VIN=5V, suitable for direct drive from 5V CMOS logic. The ultra-compact SC-105 (SOT-523F) package measuring just 1.6 x 0.8mm makes it ideal for space-constrained applications.

The DTC143ZET1G integrates a standard NPN bipolar transistor with two resistors in a single package. R1 (4.7kOhm) is connected in series between the input pin (B) and the transistor base, limiting base current. R2 (4.7kOhm) is connected between the base and emitter, providing a discharge path to turn the transistor off quickly when the input goes low. When a logic high voltage is applied to the input, current flows through R1 into the base, turning the transistor on and allowing collector current to flow. When the input goes low, R2 discharges the base-emitter capacitance, ensuring fast turn-off. The effective hFE is designed to provide approximately 30x gain at 5V input.

Pin Nombre Función
1 B Base input – connect to logic drive (through built-in R1)
2 E Emitter – connect to ground
3 C Collector – connect to load
  • MCU LED Indicator Driver: Direct GPIO drive through built-in R1; 100mA sink capability drives high-brightness LEDs
  • Relay Low-Side Switch: 50V VCEO and 100mA IC suit small signal relay coils; built-in resistors simplify BOM
  • Logic Level Inverter: Functions as single-transistor NOT gate
  • Motor Pre-Driver: Drives gate of power MOSFET with logic-level control input
Modelo Fabricante Diferencia clave
DTC143XEFT1G onsemi R1=4.7kOhm, R2=10kOhm, EMT3F package
DTC143ZCAT1G onsemi R1=4.7kOhm, R2=4.7kOhm, SOT-416
MMUN2211LT1G onsemi R1=10kOhm, R2=10kOhm, SOT-23
PDTA143ZM Nexperia PNP complement, R1=R2=4.7kOhm
DTC114YET1G onsemi R1=10kOhm, R2=10kOhm, SC-105
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