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C2M0160120D

1200V 16A SiC MOSFET, 160mΩ RDS(on), TO-247-4 Kelvin source, zero Qrr, Wolfspeed

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Pieza del fabricante：

C2M0160120D

Paquete：

TO-247-4 (4-pin, 21.0 x 15.9 x 5.3 mm)

Descripción

Productos

The C2M0160120D is a 1200V, 16A N-channel SiC (Silicon Carbide) power MOSFET from Wolfspeed (formerly Cree), part of the C2M family of SiC MOSFETs. This device features an extremely low RDS(on) of 160mΩ at 25°C (typical), high-frequency switching capability, and a 4-TO-247 (TO-247-4) package with a separate Kelvin source pin for optimized gate drive. The 1200V rating makes it ideal for high-voltage power conversion applications requiring high efficiency and power density.

Especificaciones

VDS (Drain-Source Voltage)	1200 V
ID (Continuous Drain Current)	16 A @ 25°C
RDS(on) (Typ)	160 mΩ @ VGS=20V, 25°C
RDS(on) (Max)	200 mΩ @ VGS=20V, 25°C
VGS(th)	2.7V (Typ)
Gate Charge (Qg)	46 nC (Typ)
Input Capacitance (Ciss)	932 pF (Typ)
Switching Energy (Eon+Eoff)	230 μJ (Typ) @ 800V, 16A
Paquete	TO-247-4 (Kelvin Source)
Temperatura de funcionamiento	-55°C to +175°C
Die Technology	4H-SiC MOSFET

Características

1200V blocking voltage with 160mΩ RDS(on) for high efficiency
4-TO-247 package with Kelvin source pin eliminates source inductance from gate loop
Zero reverse recovery charge (Qrr ≈ 0) for half-bridge applications
Temperature-independent switching characteristics for predictable behavior
High-frequency operation capability enabling smaller passive components
15V to 20V recommended gate drive voltage for optimal RDS(on)

Aplicaciones

Solar string inverters and microinverters
EV charging stations and on-board chargers
Industrial motor drives and servo amplifiers
Solid-state circuit breakers and motor soft starters
High-voltage DC-DC converters and SMPS

Introducción del producto:C2M0160120D Presentación del producto

The Wolfspeed C2M0160120D is a 1200V, 16A N-channel silicon carbide (SiC) power MOSFET fabricated on Wolfspeed’s 4H-SiC platform. With a typical RDS(on) of just 160mΩ at VGS=20V, this device delivers significantly lower conduction and switching losses compared to silicon IGBTs or MOSFETs at equivalent voltage ratings. The TO-247-4 package features a dedicated Kelvin source pin that bypasses the source inductance in the gate drive loop, enabling faster switching speeds and reduced ringing. SiC MOSFETs exhibit nearly zero reverse recovery charge (Qrr), eliminating the large reverse recovery losses that plague silicon body diodes in bridge topologies. The device supports junction temperatures up to +175°C and switching frequencies well above 100kHz, enabling dramatic size reductions in magnetic and capacitive components.

Principio de funcionamiento:C2M0160120D Principio de funcionamiento

The C2M0160120D is a vertical N-channel MOSFET fabricated on a 4H-SiC (Silicon Carbide) substrate. SiC’s wide bandgap (3.26eV vs 1.12eV for silicon) enables the drift region to be 10x thinner and more heavily doped while maintaining the same blocking voltage, resulting in dramatically lower specific on-resistance. When VGS exceeds the threshold (2.7V typical), an inversion layer forms at the semiconductor/oxide interface, creating a conductive channel between source and drain. The low RDS(on) of 160mΩ is achieved through the high electron mobility in the SiC channel and the thin, highly doped drift layer. The Kelvin source pin (pin 4) provides a separate return path for gate drive current, eliminating the voltage drop across the package source bond wire inductance (Ls × di/dt) that would otherwise slow down switching. The body diode of a SiC MOSFET has virtually zero reverse recovery charge because minority carrier injection is negligible in wide-bandgap materials.

Descripción de la clavija:C2M0160120D Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función
1	Fuente	Potencia	Main source terminal (load current path)
2	Drenaje	Potencia	Drain terminal (high voltage)
3	Puerta	Entrada	Gate drive input (15-20V recommended)
4	Kelvin Source	Entrada	Gate drive return path (bypasses source inductance)

Application Scenarios:In which products and applications isC2M0160120D usado

Solar string inverter boost stage and inverter bridge
EV on-board charger PFC and DC-DC stages
Industrial servo drive inverter output stage
High-voltage DC-DC converter for telecom rectifiers
Solid-state circuit breaker for DC distribution

Alternative Models:What chips are recommended as replacements for C2M0160120D

Fabricante	Número de pieza	Paquete	Notas
Wolfspeed	C2M0020120D	TO-247-3	1200V, 90A, lower RDS(on)
Infineon	IMZ120R030M1H	PG-TO247-4	1200V, CoolSiC MOSFET
STMicroelectronics	SCTW40N120G2V-4	HI-P247-4	1200V SiC MOSFET
onsemi	NTH4L030N120SC1	TO-247-4	1200V, 30mΩ SiC MOSFET
Rohm	SCT3080KR	TO-247N	1200V, 80mΩ SiC MOSFET