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BSZ097N04LSG

N-ch MOSFET, 40V/50A, 9.7mohm, OptiMOS4, TSDSON-8

6800

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Pieza del fabricante：

BSZ097N04LSG

Paquete：

PG-TSDSON-8 (5.3 x 6.2 x 1.0 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The BSZ097N04LSG is an Infineon OptiMOS 4 single N-channel 40V power MOSFET with 9.7mohm max RDS(on) at VGS=10V and 50A continuous drain current. It features logic-level gate drive and PG-TSDSON-8 (Power33) package for high power density.

Especificaciones

VDS 40 V
ID 50 A
RDS(on) max 9.7 mohm @ 10V
Qg 20 nC typical
Technology OptiMOS 4
Paquete PG-TSDSON-8

Características

  • OptiMOS 4 trench technology
  • 9.7mohm max RDS(on) at 10V
  • 50A continuous drain current
  • Logic-level gate drive (4.5V)
  • Low gate charge (20nC)
  • PG-TSDSON-8 Power33 package

Aplicaciones

  • Buck converter synchronous switch
  • Motor drive and inverter
  • Battery management and protection
  • Hot-swap and OR-ing controller

The BSZ097N04LSG is an Infineon OptiMOS 4 single N-channel 40V power MOSFET in a PG-TSDSON-8 (Power33) surface-mount package. The 9.7mohm maximum on-resistance at VGS=10V and 50A continuous current rating make it suitable for high-current synchronous buck converter and motor drive applications. The OptiMOS 4 trench-gate technology achieves the industry-leading RDS(on) x gate charge (FOM) figure of merit, optimizing both conduction and switching losses. The logic-level gate threshold enables direct drive from 5V or 3.3V microcontrollers and gate driver ICs. The low 20nC typical total gate charge minimizes gate drive power dissipation at high switching frequencies. The PG-TSDSON-8 package with large exposed drain pad provides low thermal resistance for high-power-density designs. The -LSG suffix indicates tape-and-reel, RoHS-compliant packaging.

The BSZ097N04LSG uses Infineons OptiMOS 4 trench-gate technology. Vertical trenches are etched into the silicon wafer with gate oxide and polysilicon gate electrodes filling the trenches. This creates multiple vertical MOSFET channels along the trench sidewalls, dramatically increasing channel width per unit die area compared to planar MOSFETs. The result is very low specific on-resistance (RDS(on) x Area). When VGS exceeds the threshold (typically 1.5V), an inversion layer forms along the trench sidewalls, creating a conductive channel between source and drain. At VGS=10V, the channel is fully enhanced with 9.7mohm max RDS(on). When VGS=0V, the channel is off, blocking up to 40V drain-source voltage. The low gate charge (20nC) means less energy is required to switch the MOSFET, reducing gate driver power dissipation at high switching frequencies.

Pin Mnemonic Descripción
1 S Fuente
2 S Fuente
3 G Puerta
4 S Source (Kelvin)
5-8 D Drain (exposed pad)
  • Synchronous buck converter low-side switch with 9.7mohm and 20nC for high efficiency
  • BLDC motor drive half-bridge with 50A current and logic-level gate
  • Battery management system protection switch with 40V rating
  • Hot-swap and OR-ing controller with low RDS(on) for minimal voltage drop
Modelo Fabricante Diferencia clave
BSZ097N04LS Infineon Non-tape reel version
BSZ100N04LSG Infineon Slightly different RDS(on)
IRLML6344 Infineon 30V, SOT-23, smaller
CSD18531Q5A TI Similar 40V N-ch, SON-5
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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