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BSS315PH6327XTSA1

P-Channel MOSFET, -60V, -1.9A, SOT-23, AEC-Q101

55000

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Pieza del fabricante：

BSS315PH6327XTSA1

Paquete：

SOT-23 (3 x 1.3 x 1 mm)

Marca：
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Descripción

Productos

The BSS315PH6327XTSA1 is a P-Channel enhancement-mode MOSFET from Infineon, featuring -60V drain-source voltage and -1.9A continuous drain current in a SOT-23 surface-mount package. AEC-Q101 qualified for automotive applications, it provides reliable switching for low-power load control, reverse polarity protection, and analog switching in space-constrained designs.

Especificaciones

Channel Type P-Channel
VDS -60V
ID (continuo) -1.9A
RDS(on) max 1.5 Ohm @ VGS=-10V
Paquete SOT-23
Power Dissipation 1.3W
Temperatura de funcionamiento -55°C to +150°C
Cualificación AEC-Q101

Características

  • AEC-Q101 automotive qualified
  • P-Channel for high-side switching
  • -60V rating for 12V/24V automotive systems
  • SOT-23 compact footprint
  • Low gate charge for efficient switching

Aplicaciones

  • Automotive high-side load switching
  • Reverse polarity protection
  • Power gating in battery circuits
  • Analog signal switching

The BSS315PH6327XTSA1 is a P-Channel enhancement-mode MOSFET from Infineon, featuring -60V drain-source voltage and -1.9A continuous drain current in a SOT-23 surface-mount package. AEC-Q101 qualified for automotive applications, it provides reliable switching for low-power load control, reverse polarity protection, and analog switching in space-constrained designs. The -60V rating provides comfortable margin for 12V and 24V automotive electrical systems.

The BSS315PH6327XTSA1 operates as a P-Channel enhancement-mode MOSFET:

1. P-Channel Operation: Current flows from source to drain when the gate voltage is pulled below the source (VGS < Vth, typically -1V to -2V). This allows simple high-side switching by pulling the gate to ground through a resistor. 2. Low-Power Switching: The 1.9A current rating and 1.5 Ohm RDS(on) make this MOSFET suitable for low-power loads such as sensors, LEDs, and small relays. For higher current applications, larger MOSFETs with lower RDS(on) are recommended. 3. SOT-23 Package: The small footprint (3 x 1.3mm) enables placement in space-constrained areas. The trade-off is limited power dissipation (1.3W) requiring careful thermal design. 4. Gate Protection: The gate oxide is rated for ±20V VGS. For automotive applications with voltage transients, a gate-source zener clamp or resistor may be needed for protection.

Pin Nombre Tipo Función
1 Puerta Entrada Gate terminal – controls MOSFET on/off state
2 Fuente Potencia Source terminal – connected to power rail for high-side switch
3 Drenaje Potencia Drain terminal – connected to load

Note: Standard SOT-23 pinout for P-Channel MOSFET. Pin 1 (Gate) has a narrow marking line on the package. For high-side switching, source connects to VCC and drain connects to the load.

Aplicación Circuit Role Key Requirement
Automotive ECU Low-power high-side load switch -60V, P-Channel, SOT-23
Reverse Polarity Series MOSFET for reverse blocking P-Channel, -60V, AEC-Q101
Power Gating Battery circuit disconnect switch Low IQ in off state, -60V
LED Control Small LED array driver switch -1.9A, SOT-23 compact
Sensor Interface Sensor power on/off control SOT-23, low gate charge
Fabricante Número de pieza Paquete Especificaciones Notas
Diodos Inc DMP3098L-7 SOT-23 -60V, -1.7A, P-Channel Similar specs
Nexperia BSS84P SOT-23 -60V, -0.13A, P-Channel Lower current
ON Semi BSS84 SOT-23 -50V, -0.13A, P-Channel Lower voltage/current
Vishay SI2307DS-T1-E3 SOT-23 -30V, -2.5A, P-Channel Higher current, lower V
Infineon BSS84PWR SOT-323 -60V, -0.15A, P-Channel Smaller package
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