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BSS138K-7

50V N-ch MOSFET, 3.5Ohm, logic-level, SOT-23-3

95000

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Pieza del fabricante：

BSS138K-7

Paquete：

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

Descripción

Productos

The BSS138K-7 from Diodes Incorporated is a 50V N-channel logic-level MOSFET with 3.5 Ohm RDS(on), 220mA ID, and ESD protection in SOT-23-3.

Especificaciones

VDS	50V
VGS	+/-20V
ID	220 mA
RDS(on) @ VGS=2.5V	3.5 Ohm max
RDS(on) @ VGS=4.5V	1.5 Ohm max
VGS(th)	0.8-1.5V
Qg	2.6 nC typical
ESD Protection	HBM 2kV on gate
Paquete	SOT-23-3
Temperatura de funcionamiento	-55 to +150 C (TJ)

Características

Logic-level gate threshold (0.8V min)
2kV ESD protection on gate
Low 2.6nC gate charge
Small SOT-23-3 footprint

Aplicaciones

Level shifting between logic domains
Load switching in battery devices
I2C/SPI bus level translation
Small motor driver

Introducción del producto:BSS138K-7 Presentación del producto

The BSS138K-7 from Diodes Incorporated is a 50V N-channel enhancement-mode logic-level MOSFET in SOT-23-3. The low 0.8V minimum gate threshold enables direct drive from 1.8V/2.5V/3.3V logic. The RDS(on) of 3.5 Ohm at VGS=2.5V (1.5 Ohm at 4.5V) provides efficient switching for small-signal loads. The integrated gate-source ESD protection (2kV HBM) enhances reliability. The -7 suffix denotes tape and reel packaging. This device is widely used for bidirectional level shifting in I2C and SPI buses.

Principio de funcionamiento:BSS138K-7 Principio de funcionamiento

The BSS138K-7 operates as a logic-level N-channel MOSFET. (1) The low VGS(th) of 0.8V minimum allows the gate to be driven directly from low-voltage GPIO (1.8V, 2.5V, 3.3V). At VGS=2.5V, the RDS(on) of 3.5 Ohm maximum is suitable for switching currents up to 220mA. (2) For level-shifting applications, the MOSFET is connected with drain pulled up to the higher voltage domain through a resistor, and source connected to the lower voltage domain. When neither side drives the bus, both sides are high. When either side pulls low, the MOSFET conducts and the other side follows. This bidirectional translation is the standard I2C level-shift circuit. (3) The 2kV ESD protection on the gate prevents damage during handling and assembly. The low 2.6nC gate charge enables fast switching at low drive currents.

Descripción de la clavija:BSS138K-7 Definición y funciones de las clavijas

Pin	Nombre	Descripción
1	GATE	MOSFET gate drive output for ideal diode function; connect to external N-channel MOSFET gate
2	SOURCE	MOSFET source sense input; monitors forward voltage drop for regulation
3	DRAIN	MOSFET drain sense input; monitors reverse voltage for fast turn-off protection

Package: SOT-23-3. N-Channel MOSFET. VDS: 50 V. ID: 220 mA continuous. RDS(on): 3.5 Ohm max at VGS=4.5 V, 6 Ohm max at VGS=2.5 V. VGS(th): 1.0 V min, 1.5 V typ, 2.0 V max. Gate charge: 2.5 nC at 4.5 V. Thermal resistance Rth(j-a): 625 C/W on FR-4.

Application Scenarios:In which products and applications isBSS138K-7 usado

Bidirectional Logic Level Shifting: Low VGS(th) of 1.0 V enables I2C, SPI, and UART bidirectional voltage translation between 1.8 V and 5 V logic domains using two MOSFETs in back-to-back configuration
Load Switching in Battery Devices: 3.5 Ohm RDS(on) and 220 mA continuous current suitable for power gating and load switching in coin-cell and Li-ion battery powered devices
Small-Signal Switching: 2.5 nC low gate charge and 50 V VDS rating for analog signal routing, multiplexing, and sample-and-hold circuits in precision instrumentation
Open-Drain Bus Interfacing: Converting push-pull MCU outputs to open-drain for shared bus lines (I2C, 1-Wire, SMBus) with ESD protection on gate and drain terminals
LED Matrix Row/Column Driving: 220 mA pulsed current capability for multiplexed LED matrix row and column control in small display panels

Alternative Models:What chips are recommended as replacements for BSS138K-7

Modelo	Fabricante	Diferencia clave	Paquete	VDS/ID
BSS138-7-F	Diodos Inc	Non-ESD standard version with identical 50V/220mA ratings and 3.5 Ohm RDS(on)	SOT-23-3	50V/220mA
2N7002K-7	Diodos Inc	60V/300mA N-channel MOSFET with higher VDS for voltage spike margin in switching circuits	SOT-23-3	60V/300mA
BSS138L-7	Diodos Inc	Lower threshold voltage variant (0.65V min) for sub-2V logic level shifting applications	SOT-23-3	60V/200mA
SI2302CDS-T1-GE3	Vishay	20V/2.2A N-channel with much lower 62mOhm RDS(on) for power switching applications	SOT-23-3	20V/2.2A
2N7002ET3G	onsemi	60V/260mA with AEC-Q101 automotive qualification and ESD protected gate	SOT-23-3	60V/260mA

The BSS138K-7 is a 50V N-channel enhancement-mode MOSFET in SOT-23-3 with 3.5 Ohm RDS(on) and ESD protection. It is the industry-standard choice for I2C and SPI bidirectional level shifting. The K suffix indicates ESD-protected gate. For higher current switching, the SI2302CDS offers 2.2A with 62mOhm RDS(on).