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BSS138

N-Channel logic-level MOSFET, 50V, 220mA, RDS(on) 3.5 Ohm, SOT-23-3

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Pieza del fabricante：

BSS138

Paquete：

SOT-23-3 / TO-236-3 (2,9 x 1,3 x 1,0 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The BSS138 from onsemi (formerly Fairchild) is an N-channel logic-level enhancement-mode MOSFET in the industry-standard SOT-23-3 surface-mount package. Rated for 50V drain-source voltage and 220mA continuous drain current, it is specifically designed for low-voltage switching applications. With a gate threshold voltage of 0.8-1.5V and RDS(on) of 3.5 Ohm maximum at VGS=10V, the BSS138 can be driven directly from 3.3V and 5V microcontroller GPIOs, making it one of the most popular small-signal MOSFETs for logic-level interfacing.

Especificaciones

VDS (Drain-Source Voltage) 50V
ID (Continuous Drain Current) 220mA
RDS(on) Max @ VGS=10V 3.5 Ohm
RDS(on) Max @ VGS=4.5V 6.0 Ohm
VGS(th) Range 0.8V to 1.5V
Total Gate Charge (Qg) 2.4nC max @ 10V
Input Capacitance (Ciss) 27pF @ 25V
Power Dissipation 360mW
Temperatura de funcionamiento -55 to +150°C
Paquete SOT-23-3 (TO-236-3)

Características

  • Logic-level gate drive: 0.8V min threshold enables 2.5V/3.3V operation
  • Low RDS(on): 3.5 Ohm max at VGS=10V
  • Low gate charge (2.4nC) for fast switching
  • High-density cell design for low on-resistance
  • Pb-free and halogen-free construction
  • Industry-standard SOT-23-3 package
  • Low input capacitance (27pF) minimizes drive power

Aplicaciones

  • Logic-level signal switching and level shifting
  • Load switching in battery-powered devices
  • I2C and SPI bus voltage level translation
  • Small servo motor control
  • MOSFET gate driver pre-driver

The BSS138 from onsemi is a widely-used N-channel logic-level enhancement-mode MOSFET produced using proprietary high cell density DMOS technology. Engineered to minimize on-state resistance while providing rugged and reliable switching performance, the BSS138 has become an industry staple for low-voltage, low-current applications. Its low gate threshold voltage (0.8-1.5V) enables direct control from 3.3V and even 2.5V logic, making it the go-to choice for bidirectional level shifting circuits in I2C and SPI buses. The industry-standard SOT-23-3 package allows high-density PCB placement, and its extremely low cost makes it practical for high-volume consumer electronics.

The BSS138 operates as a voltage-controlled switch. When a gate-source voltage (VGS) exceeding the threshold voltage (VGS(th) = 0.8-1.5V) is applied, an inversion layer forms beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(on)) decreases with increasing VGS, reaching 3.5 Ohm maximum at VGS=10V and 6.0 Ohm at VGS=4.5V. As an enhancement-mode device, it is normally off when VGS=0, with leakage current below 0.5uA. The small gate charge (1.7-2.4nC) enables fast switching transitions with typical turn-on delay of 2.5ns and turn-off delay of 20ns. The body diode between source and drain provides a path for inductive kickback currents in switching applications.

Pin Nombre Tipo Función
1 G (Gate) Entrada Gate control terminal
2 S (Source) Fuente Source terminal
3 D (Drain) Drenaje Drain terminal
  • Bidirectional voltage level translation for I2C, SPI, and UART buses (3.3V to 5V)
  • Low-side load switching in battery-powered microcontroller circuits
  • LED and relay driver controlled by GPIO pins
  • Power gating for low-power sleep modes in portable devices
  • Signal gating and analog switch replacement in sensor interfaces
Fabricante Número de pieza Paquete Notas
NXP BSS138 SOT-23-3 60V version, pin compatible
Diodos Inc MMBF170 SOT-23-3 60V, 500mA, higher RDS(on)
Infineon BSR14 SOT-23-3 60V, 280mA, logic level
Vishay 2N7002 SOT-23-3 60V, 300mA, popular alternative
TI 2N7002K SOT-23-3 60V, 350mA, ESD protected gate
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