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BC846B

NPN GP Transistor, 65V 100mA, hFE 200-450B, SOT-23

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Pieza del fabricante：

BC846B

Paquete：

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

Descripción

Productos

The BC846B from Nexperia is a 65V, 100mA NPN general-purpose transistor with hFE 200-450 (B group) in a SOT-23-3 surface mount package.

Especificaciones

Tipo	NPN General-Purpose Transistor
VCEO	65 V
IC	100 mA (continuous)
Power Dissipation	250 mW @ TA=25C
hFE (B group)	200 ~ 450 @ IC=2mA
VCE(sat)	90 mV (max) @ IC=10mA, IB=0.5mA
fT	100 MHz (typical)
Paquete	SOT-23-3
Temperatura de funcionamiento	-65C to +150C (TJ)

Características

65V VCEO for general-purpose use
B group hFE: 200-450 for tight gain matching
100 mA collector current
90 mV low saturation voltage
Industry-standard SOT-23-3 pinout
Complementary PNP: BC856B

Aplicaciones

General-purpose switching and amplification

Introducción del producto:BC846B Presentación del producto

The BC846B from Nexperia is an NPN general-purpose bipolar junction transistor in an industry-standard SOT-23-3 surface mount package. The B group specifies a DC current gain (hFE) of 200 to 450 at IC=2mA, providing tighter gain distribution than the A group (110-220) or C group (420-800). The 65V VCEO and 100mA IC ratings cover a broad range of low-power switching and amplification applications. The 90 mV maximum VCE(sat) at 10mA indicates efficient switching with minimal voltage drop. The complementary PNP device (BC856B) enables push-pull and bridge circuit configurations. The BC846 series is one of the most widely used small-signal transistor families, available from multiple manufacturers with pin-compatible equivalents.

Principio de funcionamiento:BC846B Principio de funcionamiento

The BC846B is a planar epitaxial NPN bipolar junction transistor. The vertical structure consists of an N+ substrate (collector), N- epitaxial collector layer, P-type base diffused into the epitaxial layer, and N+ emitter diffused into the base. When forward base current flows, minority carriers (holes) are injected into the emitter, and the resulting collector current is amplified by the hFE gain (200-450 for B group). The 100 MHz transition frequency is the frequency at which the common-emitter current gain drops to unity, set by the base transit time and collector depletion capacitance. The 90 mV VCE(sat) represents the low saturation voltage when the transistor is driven hard into saturation (IB > IC/hFE). The SOT-23 package provides junction-to-ambient thermal resistance of approximately 500 K/W, limiting continuous dissipation to 250 mW at 25C ambient.

Descripción de la clavija:BC846B Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función
1	Base	Entrada	Base terminal
2	Emisor	E/S	Emitter terminal
3	Colector	E/S	Collector terminal

Application Scenarios:In which products and applications isBC846B usado

3.3V LED driver switch with hFE 300 and 100mA sink current
Logic level converter from 5V to 3.3V using open-collector configuration
Complementary push-pull audio preamp with BC856B PNP
Sensor signal amplifier with B group tight hFE matching

Alternative Models:What chips are recommended as replacements for BC846B

Fabricante	Número de pieza	Paquete	Notas
onsemi	BC846BLT1G	SOT-23	Pin-compatible equivalent
Infineon	BC846BE6433	SOT-23	Pin-compatible equivalent
Diodos Inc	BC846B-7-F	SOT-23	Pin-compatible equivalent
Nexperia	BC846A,215	SOT-23	A group (hFE 110-220)
Nexperia	BC846C,215	SOT-23	C group (hFE 420-800)